Electronic switching in phase-change memories

Electronic switching in phase-change memories

A detailed investigation of electronic switching in chalcogenide-based phase-change memory devices is presented. An original bandgap model consistent with the microscopic structure of both crystalline and amorphous chalcogenide is described, and a physical picture of the switching mechanism is propo...

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Veröffentlicht in:IEEE transactions on electron devices 2004-03, Vol.51 (3), p.452-459
Hauptverfasser: Pirovano, A., Lacaita, A.L., Benvenuti, A., Pellizzer, F., Bez, R.
Format: Artikel
Sprache:eng
Schlagworte:
Chalcogenides
Current distribution
Data storage
Devices
Electronics
Mathematical models
Memory devices
Resistors
Semiconductor materials
Semiconductor switches
Switching
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Beschreibung
Zusammenfassung:A detailed investigation of electronic switching in chalcogenide-based phase-change memory devices is presented. An original bandgap model consistent with the microscopic structure of both crystalline and amorphous chalcogenide is described, and a physical picture of the switching mechanism is proposed. Numerical simulations provide, for the first time, a quantitative description of the peculiar current-voltage curve of a Ge/sub 2/Sb/sub 2/Te/sub 5/ resistor, in good agreement with measurements performed on test devices.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2003.823243