Temperature-insensitive photoluminescence emission wavelength in GaAs1-xBix/GaAs multiquantum wells

Temperature-insensitive photoluminescence emission wavelength in GaAs1-xBix/GaAs multiquantum wells

GaAs1–xBix/GaAs multiquantum wells (MQWs) were grown on GaAs substrate by molecular beam epitaxy at a growth temperature of 350 ºC. The MQWs showed clear satellite peaks and interference fringes between the satellite peaks in their high‐resolution x‐ray diffraction patterns. It was confirmed that ph...

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Veröffentlicht in:Physica status solidi. C 2011-02, Vol.8 (2), p.260-262
Hauptverfasser: Tominaga, Yoriko, Oe, Kunishige, Yoshimoto, Masahiro
Format: Artikel
Sprache:eng
Schlagworte:
Coefficients
dilute bismide alloys
Emission
Gallium arsenide
Gallium arsenides
molecular beam epitaxy
multiquantum wells
Photoluminescence
Satellites
Wavelengths
Wells
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Zusammenfassung:GaAs1–xBix/GaAs multiquantum wells (MQWs) were grown on GaAs substrate by molecular beam epitaxy at a growth temperature of 350 ºC. The MQWs showed clear satellite peaks and interference fringes between the satellite peaks in their high‐resolution x‐ray diffraction patterns. It was confirmed that photoluminescence (PL) emission wavelengths in GaAs1–xBix/GaAs MQWs have temperature insensitivity. The temperature coefficient of the PL peak energy in GaAs1–xBix/GaAs MQWs decreased with increasing GaBi molar fraction. For GaAs0.946Bi0.054/GaAs MQWs, the temperature coefficient of the PL peak energy was confirmed to be –0.19 meV/K (180–300 K) that is 40% of the value for the band gap of GaAs. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
1610-1642
DOI:10.1002/pssc.201000520