Mechanisms of wafer sawing and impact on wafer properties

Silicon wafer wire‐sawing experiments were realized with different sets of sawing parameters, and the thickness, roughness, and cracks depth of the wafers were measured. The results are discussed in relation to assumptions underlying the rolling–indenting model, which describes the process. It was also found that the silicon surface at the bottom of the sawing groove is different from the wafer surface, implying different sawing conditions in the two positions. Furthermore, the measured parameters were found to vary along the wire direction, between the entrance of the wire in the ingot and its exit. Based on these observations, some improvements for the wire‐sawing model are discussed. Copyright © 2010 John Wiley & Sons, Ltd. Silicon wafer wire‐sawing experiments were realised with different sets of sawing parameters. The impact of the sawing parameters on the wafer characteristics is measured and differences between the bottom of the saw groove and the wafer surface are discussed. Finally, the variation of the wafer surface characteristics between the entrance of the wire in the ingot and its exit is analysed. Based on these observations, some improvements for the wire‐sawing model are discussed.