A fully matched N-way Doherty amplifier with optimized linearity

A fully matched N-way Doherty amplifier with optimized linearity

This paper presents a new fully matched N-way Doherty amplifier. The basic principles of operation and important features are described. For the experimental verification, 2.14-GHz Doherty amplifiers having two-, three-, and four-way structures are implemented using silicon LDMOSFETs and tested usin...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 2003-03, Vol.51 (3), p.986-993
Hauptverfasser: Yang, Youngoo, Cha, Jeonghyeon, Shin, Bumjae, Kim, Bumman
Format: Artikel
Sprache:eng
Schlagworte:
Amplification
Amplifiers
Base stations
Bias
Circuits
Costs
Degradation
Gates
High power amplifiers
Linearity
Microwave amplifiers
Microwaves
Multiaccess communication
Power amplifiers
Power generation
Silicon
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Beschreibung
Zusammenfassung:This paper presents a new fully matched N-way Doherty amplifier. The basic principles of operation and important features are described. For the experimental verification, 2.14-GHz Doherty amplifiers having two-, three-, and four-way structures are implemented using silicon LDMOSFETs and tested using down-link WCDMA signal. The linearity performances of the two-, three-, and four-way Doherty amplifiers are optimized for better efficiency versus linearity by a bias adjustment of the peaking amplifiers. For simultaneously improving the efficiency and linearity to achieve maximum efficiency versus linearity, the gate biases of the peaking amplifiers for the N-way Doherty amplifier are optimized. As a result, the efficiency versus linearity characteristics are drastically improved by N-way extension of the Doherty amplifier.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2003.808713