Chemical composition of GaAs-nitride nanolayers formed by implantation

Nitration of n‐type GaAs (100) by N2+ ions with the energy Ei = 1.5 keV has been studied by photoelectron spectroscopy with using synchrotron radiation. Phase of GaAs1‐xNx (x ∼ 0.10) alloy was revealed in the nitrated nanolayer besides GaN and nitrogen N1s core‐level binding energies in GaAs1‐xNx (E...

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Veröffentlicht in:	Physica status solidi. C 2009-12, Vol.6 (12), p.2655-2657
Hauptverfasser:	Mikoushkin, V. M., Gordeev, Yu. S., Nikonov, S. Yu, Solonitsina, A. P., Zhuravleva, A. A., Brzhezinskaya, M. M.
Format:	Artikel
Sprache:	eng
Schlagworte:	61.72.uj 68.35.bg 68.47.Fg 68.49.−h 81.65.Rv 82.80.Pv Alloy systems Gallium arsenide Gallium arsenides Gallium nitrides Nanocomposites Nanomaterials Nanostructure Reproduction
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