Chemical composition of GaAs-nitride nanolayers formed by implantation

Nitration of n‐type GaAs (100) by N2+ ions with the energy Ei = 1.5 keV has been studied by photoelectron spectroscopy with using synchrotron radiation. Phase of GaAs1‐xNx (x ∼ 0.10) alloy was revealed in the nitrated nanolayer besides GaN and nitrogen N1s core‐level binding energies in GaAs1‐xNx (E...

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Veröffentlicht in:Physica status solidi. C 2009-12, Vol.6 (12), p.2655-2657
Hauptverfasser: Mikoushkin, V. M., Gordeev, Yu. S., Nikonov, S. Yu, Solonitsina, A. P., Zhuravleva, A. A., Brzhezinskaya, M. M.
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Sprache:eng
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Zusammenfassung:Nitration of n‐type GaAs (100) by N2+ ions with the energy Ei = 1.5 keV has been studied by photoelectron spectroscopy with using synchrotron radiation. Phase of GaAs1‐xNx (x ∼ 0.10) alloy was revealed in the nitrated nanolayer besides GaN and nitrogen N1s core‐level binding energies in GaAs1‐xNx (Eb = 397.5 eV) and GaN (Eb = 396.7 eV) were measured in one experiment. It was shown that the nitrated nanolayer consists of the narrow band gap clusters of GaAs1‐xNx alloy in the GaN wide band gap matrix, which can be considered as a system with quantum dots. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
1610-1642
DOI:10.1002/pssc.200982583