Chemical composition of GaAs-nitride nanolayers formed by implantation
Nitration of n‐type GaAs (100) by N2+ ions with the energy Ei = 1.5 keV has been studied by photoelectron spectroscopy with using synchrotron radiation. Phase of GaAs1‐xNx (x ∼ 0.10) alloy was revealed in the nitrated nanolayer besides GaN and nitrogen N1s core‐level binding energies in GaAs1‐xNx (E...
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Veröffentlicht in: | Physica status solidi. C 2009-12, Vol.6 (12), p.2655-2657 |
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creator | Mikoushkin, V. M. Gordeev, Yu. S. Nikonov, S. Yu Solonitsina, A. P. Zhuravleva, A. A. Brzhezinskaya, M. M. |
description | Nitration of n‐type GaAs (100) by N2+ ions with the energy Ei = 1.5 keV has been studied by photoelectron spectroscopy with using synchrotron radiation. Phase of GaAs1‐xNx (x ∼ 0.10) alloy was revealed in the nitrated nanolayer besides GaN and nitrogen N1s core‐level binding energies in GaAs1‐xNx (Eb = 397.5 eV) and GaN (Eb = 396.7 eV) were measured in one experiment. It was shown that the nitrated nanolayer consists of the narrow band gap clusters of GaAs1‐xNx alloy in the GaN wide band gap matrix, which can be considered as a system with quantum dots. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
doi_str_mv | 10.1002/pssc.200982583 |
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fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_901678819</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>896233404</sourcerecordid><originalsourceid>FETCH-LOGICAL-c4573-e12c7973969d3cb665061e86b33531c8a0054fdbfa8535c42758368a39bcc1323</originalsourceid><addsrcrecordid>eNqFkUFv1DAQRiMEUkvh2nNucMnW47HH9rFa0W2lCpAW6NFyvI4wJHGwU8H--2a1qOLEnmYO732a0VdVl8BWwBi_mkrxK86Y0VxqfFGdAwFrgAR_ueyaeEMo4ax6XcoPxlAyoPPqZv09DNG7vvZpmFKJc0xjnbp6465LM8Y5x12oRzem3u1DLnWX8hB2dbuv4zD1bpzdwXhTvepcX8Lbv_Oi-nrz4cv6trn_tLlbX983XkiFTQDulVFoyOzQt0SSEQRNLaJE8NoxJkW3azunJUovuFo-Ie3QtN4Dcryo3h1zp5x-PYYy2yEWH_rlkJAeizXLU0prMCdJbYgjCiYW8v1_SVDEgQMtJ51ESQGXxMQhdXVEfU6l5NDZKcfB5b0FZg992UNf9rmvRTBH4Xfsw_4EbT9vt-t_3eboxjKHP8-uyz8tKVTSPnzcWPUNmJDbByvwCUuEpsE</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1671256044</pqid></control><display><type>article</type><title>Chemical composition of GaAs-nitride nanolayers formed by implantation</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Mikoushkin, V. M. ; Gordeev, Yu. S. ; Nikonov, S. Yu ; Solonitsina, A. P. ; Zhuravleva, A. A. ; Brzhezinskaya, M. M.</creator><creatorcontrib>Mikoushkin, V. M. ; Gordeev, Yu. S. ; Nikonov, S. Yu ; Solonitsina, A. P. ; Zhuravleva, A. A. ; Brzhezinskaya, M. M.</creatorcontrib><description>Nitration of n‐type GaAs (100) by N2+ ions with the energy Ei = 1.5 keV has been studied by photoelectron spectroscopy with using synchrotron radiation. Phase of GaAs1‐xNx (x ∼ 0.10) alloy was revealed in the nitrated nanolayer besides GaN and nitrogen N1s core‐level binding energies in GaAs1‐xNx (Eb = 397.5 eV) and GaN (Eb = 396.7 eV) were measured in one experiment. It was shown that the nitrated nanolayer consists of the narrow band gap clusters of GaAs1‐xNx alloy in the GaN wide band gap matrix, which can be considered as a system with quantum dots. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6351</identifier><identifier>ISSN: 1610-1642</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.200982583</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>61.72.uj ; 68.35.bg ; 68.47.Fg ; 68.49.−h ; 81.65.Rv ; 82.80.Pv ; Alloy systems ; Gallium arsenide ; Gallium arsenides ; Gallium nitrides ; Nanocomposites ; Nanomaterials ; Nanostructure ; Reproduction</subject><ispartof>Physica status solidi. C, 2009-12, Vol.6 (12), p.2655-2657</ispartof><rights>Copyright © 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4573-e12c7973969d3cb665061e86b33531c8a0054fdbfa8535c42758368a39bcc1323</citedby></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssc.200982583$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssc.200982583$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27903,27904,45553,45554</link.rule.ids></links><search><creatorcontrib>Mikoushkin, V. M.</creatorcontrib><creatorcontrib>Gordeev, Yu. S.</creatorcontrib><creatorcontrib>Nikonov, S. Yu</creatorcontrib><creatorcontrib>Solonitsina, A. P.</creatorcontrib><creatorcontrib>Zhuravleva, A. A.</creatorcontrib><creatorcontrib>Brzhezinskaya, M. M.</creatorcontrib><title>Chemical composition of GaAs-nitride nanolayers formed by implantation</title><title>Physica status solidi. C</title><addtitle>Phys. Status Solidi (c)</addtitle><description>Nitration of n‐type GaAs (100) by N2+ ions with the energy Ei = 1.5 keV has been studied by photoelectron spectroscopy with using synchrotron radiation. Phase of GaAs1‐xNx (x ∼ 0.10) alloy was revealed in the nitrated nanolayer besides GaN and nitrogen N1s core‐level binding energies in GaAs1‐xNx (Eb = 397.5 eV) and GaN (Eb = 396.7 eV) were measured in one experiment. It was shown that the nitrated nanolayer consists of the narrow band gap clusters of GaAs1‐xNx alloy in the GaN wide band gap matrix, which can be considered as a system with quantum dots. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><subject>61.72.uj</subject><subject>68.35.bg</subject><subject>68.47.Fg</subject><subject>68.49.−h</subject><subject>81.65.Rv</subject><subject>82.80.Pv</subject><subject>Alloy systems</subject><subject>Gallium arsenide</subject><subject>Gallium arsenides</subject><subject>Gallium nitrides</subject><subject>Nanocomposites</subject><subject>Nanomaterials</subject><subject>Nanostructure</subject><subject>Reproduction</subject><issn>1862-6351</issn><issn>1610-1642</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFkUFv1DAQRiMEUkvh2nNucMnW47HH9rFa0W2lCpAW6NFyvI4wJHGwU8H--2a1qOLEnmYO732a0VdVl8BWwBi_mkrxK86Y0VxqfFGdAwFrgAR_ueyaeEMo4ax6XcoPxlAyoPPqZv09DNG7vvZpmFKJc0xjnbp6465LM8Y5x12oRzem3u1DLnWX8hB2dbuv4zD1bpzdwXhTvepcX8Lbv_Oi-nrz4cv6trn_tLlbX983XkiFTQDulVFoyOzQt0SSEQRNLaJE8NoxJkW3azunJUovuFo-Ie3QtN4Dcryo3h1zp5x-PYYy2yEWH_rlkJAeizXLU0prMCdJbYgjCiYW8v1_SVDEgQMtJ51ESQGXxMQhdXVEfU6l5NDZKcfB5b0FZg992UNf9rmvRTBH4Xfsw_4EbT9vt-t_3eboxjKHP8-uyz8tKVTSPnzcWPUNmJDbByvwCUuEpsE</recordid><startdate>200912</startdate><enddate>200912</enddate><creator>Mikoushkin, V. M.</creator><creator>Gordeev, Yu. S.</creator><creator>Nikonov, S. Yu</creator><creator>Solonitsina, A. P.</creator><creator>Zhuravleva, A. A.</creator><creator>Brzhezinskaya, M. M.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7QQ</scope><scope>7U5</scope><scope>8FD</scope><scope>H8D</scope><scope>JG9</scope><scope>L7M</scope><scope>7QO</scope><scope>FR3</scope><scope>P64</scope></search><sort><creationdate>200912</creationdate><title>Chemical composition of GaAs-nitride nanolayers formed by implantation</title><author>Mikoushkin, V. M. ; Gordeev, Yu. S. ; Nikonov, S. Yu ; Solonitsina, A. P. ; Zhuravleva, A. A. ; Brzhezinskaya, M. M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4573-e12c7973969d3cb665061e86b33531c8a0054fdbfa8535c42758368a39bcc1323</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>61.72.uj</topic><topic>68.35.bg</topic><topic>68.47.Fg</topic><topic>68.49.−h</topic><topic>81.65.Rv</topic><topic>82.80.Pv</topic><topic>Alloy systems</topic><topic>Gallium arsenide</topic><topic>Gallium arsenides</topic><topic>Gallium nitrides</topic><topic>Nanocomposites</topic><topic>Nanomaterials</topic><topic>Nanostructure</topic><topic>Reproduction</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mikoushkin, V. M.</creatorcontrib><creatorcontrib>Gordeev, Yu. S.</creatorcontrib><creatorcontrib>Nikonov, S. Yu</creatorcontrib><creatorcontrib>Solonitsina, A. P.</creatorcontrib><creatorcontrib>Zhuravleva, A. A.</creatorcontrib><creatorcontrib>Brzhezinskaya, M. M.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Ceramic Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Biotechnology Research Abstracts</collection><collection>Engineering Research Database</collection><collection>Biotechnology and BioEngineering Abstracts</collection><jtitle>Physica status solidi. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mikoushkin, V. M.</au><au>Gordeev, Yu. S.</au><au>Nikonov, S. Yu</au><au>Solonitsina, A. P.</au><au>Zhuravleva, A. A.</au><au>Brzhezinskaya, M. M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Chemical composition of GaAs-nitride nanolayers formed by implantation</atitle><jtitle>Physica status solidi. C</jtitle><addtitle>Phys. Status Solidi (c)</addtitle><date>2009-12</date><risdate>2009</risdate><volume>6</volume><issue>12</issue><spage>2655</spage><epage>2657</epage><pages>2655-2657</pages><issn>1862-6351</issn><issn>1610-1642</issn><eissn>1610-1642</eissn><abstract>Nitration of n‐type GaAs (100) by N2+ ions with the energy Ei = 1.5 keV has been studied by photoelectron spectroscopy with using synchrotron radiation. Phase of GaAs1‐xNx (x ∼ 0.10) alloy was revealed in the nitrated nanolayer besides GaN and nitrogen N1s core‐level binding energies in GaAs1‐xNx (Eb = 397.5 eV) and GaN (Eb = 396.7 eV) were measured in one experiment. It was shown that the nitrated nanolayer consists of the narrow band gap clusters of GaAs1‐xNx alloy in the GaN wide band gap matrix, which can be considered as a system with quantum dots. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssc.200982583</doi><tpages>3</tpages></addata></record> |
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subjects | 61.72.uj 68.35.bg 68.47.Fg 68.49.−h 81.65.Rv 82.80.Pv Alloy systems Gallium arsenide Gallium arsenides Gallium nitrides Nanocomposites Nanomaterials Nanostructure Reproduction |
title | Chemical composition of GaAs-nitride nanolayers formed by implantation |
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