A comparative study of heavy-ion and proton-induced bit-error sensitivity and complex burst-error modes in commercially available high-speed SiGe BiCMOS
We compare heavy ion and proton SEE data on commercial SiGe technologies from IBMs 7 HP and 5 AM processes and Jazz Semiconductors SiGe120 process at data rates from 50Mb/s to 12.4 Gb/s. Complex burst-error trends correlate with both data rate and particle LET, as well as pulsed laser probing of bot...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2004-12, Vol.51 (6), p.3457-3463 |
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| creator | Marshall, P. Carts, M. Campbell, A. Ladbury, R. Reed, R. Marshall, C. Currie, S. McMorrow, D. Buchner, S. Seidleck, C. Riggs, P. Fritz, K. Randall, B. Gilbert, B. |
| description | We compare heavy ion and proton SEE data on commercial SiGe technologies from IBMs 7 HP and 5 AM processes and Jazz Semiconductors SiGe120 process at data rates from 50Mb/s to 12.4 Gb/s. Complex burst-error trends correlate with both data rate and particle LET, as well as pulsed laser probing of both data paths and clock distribution circuitry. |
| doi_str_mv | 10.1109/TNS.2004.839193 |
| format | Article |
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| subjects | BiCMOS integrated circuits Bursting Circuit testing Clocks CMOS technology Data paths Germanium silicon alloys Ground testing Heterojunction bipolar transistors High speed high-speed testing Jazz NASA Protons Pulse width modulation Pulsed lasers Semiconductors Silicon germanides Silicon germanium silicon germanium (SiGe) single-event effect (SEE) single-event upset (SEU) Substrates |
| title | A comparative study of heavy-ion and proton-induced bit-error sensitivity and complex burst-error modes in commercially available high-speed SiGe BiCMOS |
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