A comparative study of heavy-ion and proton-induced bit-error sensitivity and complex burst-error modes in commercially available high-speed SiGe BiCMOS

We compare heavy ion and proton SEE data on commercial SiGe technologies from IBMs 7 HP and 5 AM processes and Jazz Semiconductors SiGe120 process at data rates from 50Mb/s to 12.4 Gb/s. Complex burst-error trends correlate with both data rate and particle LET, as well as pulsed laser probing of bot...

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Veröffentlicht in:	IEEE transactions on nuclear science 2004-12, Vol.51 (6), p.3457-3463
Hauptverfasser:	Marshall, P., Carts, M., Campbell, A., Ladbury, R., Reed, R., Marshall, C., Currie, S., McMorrow, D., Buchner, S., Seidleck, C., Riggs, P., Fritz, K., Randall, B., Gilbert, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	BiCMOS integrated circuits Bursting Circuit testing Clocks CMOS technology Data paths Germanium silicon alloys Ground testing Heterojunction bipolar transistors High speed high-speed testing Jazz NASA Protons Pulse width modulation Pulsed lasers Semiconductors Silicon germanides Silicon germanium silicon germanium (SiGe) single-event effect (SEE) single-event upset (SEU) Substrates
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Beschreibung
Zusammenfassung:	We compare heavy ion and proton SEE data on commercial SiGe technologies from IBMs 7 HP and 5 AM processes and Jazz Semiconductors SiGe120 process at data rates from 50Mb/s to 12.4 Gb/s. Complex burst-error trends correlate with both data rate and particle LET, as well as pulsed laser probing of both data paths and clock distribution circuitry.
ISSN:	0018-9499 1558-1578
DOI:	10.1109/TNS.2004.839193