Fabrication of transparent conductive W-doped SnO2 thin films on glass substrates using anatase TiO2 seed layers

Pulsed laser deposition was used to grow W‐doped SnO2 (WTO) thin films on glass substrates. By using 10‐nm‐thick polycrystalline anatase TiO2 seed layers formed on the glass substrates, the lowest resistivity of 3.5 × 10‐4 Ωcm, with a mobility of 84 cm2V‐1s‐1 and a carrier concentration of 2.1 × 1020 cm‐3, was obtained at a W concentration of 1.5 at.%. An optimized WTO film with a sheet resistance of 9.1 Ω/□ exhibited an optical transmittance of over 70% at wavelengths ranging from 400 to 1950 nm. These transport and optical properties are comparable to those of Ta‐doped SnO2 (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)