Development of bottom-emitting 1300-nm vertical-cavity surface-emitting lasers
We present experimental results on the development of bottom-emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) operating at wavelengths near 1300 nm. This development effort is based on the modification of oxide-apertured top-emitting structures to allow emission through the GaAs sub...
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| Veröffentlicht in: | IEEE photonics technology letters 2004-04, Vol.16 (4), p.963-965 |
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| container_title | IEEE photonics technology letters |
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| creator | Louderback, D.A. Fish, M.A. Klem, J.F. Serkland, D.K. Choquette, K.D. Pickrell, G.W. Stone, R.V. Guilfoyle, P.S. |
| description | We present experimental results on the development of bottom-emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) operating at wavelengths near 1300 nm. This development effort is based on the modification of oxide-apertured top-emitting structures to allow emission through the GaAs substrate. Similar device performance was seen in both the top- and bottom-emitting structures. Single-mode output powers (adjusted for substrate absorption) of /spl sim/0.75 mW, with threshold currents of 1.3 mA, were achieved with /spl sim/3.5-μm aperture diameters. Larger multimode devices exhibited a maximum adjusted output power of 2.2 mW. To the best of our knowledge, these are the first bottom-emitting flip-chip compatible 1300-nm VCSELs fabricated with GaInNAs-GaAs active regions. |
| doi_str_mv | 10.1109/LPT.2004.824614 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_901676764</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1281838</ieee_id><sourcerecordid>2426815291</sourcerecordid><originalsourceid>FETCH-LOGICAL-c349t-e22ef8edb1cf960212a201169d97e8df58a1fb240272989f3f051ef004e06c133</originalsourceid><addsrcrecordid>eNp9kc1LAzEQxYMoWKtnD14WD3radibJbpOj-A1FPdRzSLcT2bIfNUkL_e9NqVDwIHOYOfzegzePsUuEESLo8fRjNuIAcqS4LFEesQFqiTngRB6nG9KNKIpTdhbCEgBlIeSAvT3Qhpp-1VIXs95l8z7Gvs2prWOsu68MBUDetdmGfKwr2-SV3dRxm4W1d7aiA9jYQD6csxNnm0AXv3vIPp8eZ_cv-fT9-fX-bppXQuqYE-fkFC3mWDldAkduOSCWeqEnpBauUBbdnEvgE66VdsJBgeRSOoKyQiGG7Hbvu_L995pCNG0dKmoa21G_DkYDlpM0MpE3_5Jc8VIA8gRe_wGX_dp3KYVRSigoIH1syMZ7qPJ9CJ6cWfm6tX5rEMyuBpNqMLsazL6GpLjaK2oiOtBcYTIVP7cqgeA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>883805045</pqid></control><display><type>article</type><title>Development of bottom-emitting 1300-nm vertical-cavity surface-emitting lasers</title><source>IEEE Electronic Library (IEL)</source><creator>Louderback, D.A. ; Fish, M.A. ; Klem, J.F. ; Serkland, D.K. ; Choquette, K.D. ; Pickrell, G.W. ; Stone, R.V. ; Guilfoyle, P.S.</creator><creatorcontrib>Louderback, D.A. ; Fish, M.A. ; Klem, J.F. ; Serkland, D.K. ; Choquette, K.D. ; Pickrell, G.W. ; Stone, R.V. ; Guilfoyle, P.S.</creatorcontrib><description>We present experimental results on the development of bottom-emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) operating at wavelengths near 1300 nm. This development effort is based on the modification of oxide-apertured top-emitting structures to allow emission through the GaAs substrate. Similar device performance was seen in both the top- and bottom-emitting structures. Single-mode output powers (adjusted for substrate absorption) of /spl sim/0.75 mW, with threshold currents of 1.3 mA, were achieved with /spl sim/3.5-μm aperture diameters. Larger multimode devices exhibited a maximum adjusted output power of 2.2 mW. To the best of our knowledge, these are the first bottom-emitting flip-chip compatible 1300-nm VCSELs fabricated with GaInNAs-GaAs active regions.</description><identifier>ISSN: 1041-1135</identifier><identifier>EISSN: 1941-0174</identifier><identifier>DOI: 10.1109/LPT.2004.824614</identifier><identifier>CODEN: IPTLEL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Absorption ; Adjustment ; Apertures ; Compatibility ; Devices ; Distributed Bragg reflectors ; Emission ; Gallium arsenide ; Optical surface waves ; Power generation ; Substrates ; Surface emitting lasers ; Surface waves ; Threshold currents ; Vertical cavity surface emission lasers ; Vertical cavity surface emitting lasers ; Wavelengths</subject><ispartof>IEEE photonics technology letters, 2004-04, Vol.16 (4), p.963-965</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2004</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c349t-e22ef8edb1cf960212a201169d97e8df58a1fb240272989f3f051ef004e06c133</citedby><cites>FETCH-LOGICAL-c349t-e22ef8edb1cf960212a201169d97e8df58a1fb240272989f3f051ef004e06c133</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1281838$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1281838$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Louderback, D.A.</creatorcontrib><creatorcontrib>Fish, M.A.</creatorcontrib><creatorcontrib>Klem, J.F.</creatorcontrib><creatorcontrib>Serkland, D.K.</creatorcontrib><creatorcontrib>Choquette, K.D.</creatorcontrib><creatorcontrib>Pickrell, G.W.</creatorcontrib><creatorcontrib>Stone, R.V.</creatorcontrib><creatorcontrib>Guilfoyle, P.S.</creatorcontrib><title>Development of bottom-emitting 1300-nm vertical-cavity surface-emitting lasers</title><title>IEEE photonics technology letters</title><addtitle>LPT</addtitle><description>We present experimental results on the development of bottom-emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) operating at wavelengths near 1300 nm. This development effort is based on the modification of oxide-apertured top-emitting structures to allow emission through the GaAs substrate. Similar device performance was seen in both the top- and bottom-emitting structures. Single-mode output powers (adjusted for substrate absorption) of /spl sim/0.75 mW, with threshold currents of 1.3 mA, were achieved with /spl sim/3.5-μm aperture diameters. Larger multimode devices exhibited a maximum adjusted output power of 2.2 mW. To the best of our knowledge, these are the first bottom-emitting flip-chip compatible 1300-nm VCSELs fabricated with GaInNAs-GaAs active regions.</description><subject>Absorption</subject><subject>Adjustment</subject><subject>Apertures</subject><subject>Compatibility</subject><subject>Devices</subject><subject>Distributed Bragg reflectors</subject><subject>Emission</subject><subject>Gallium arsenide</subject><subject>Optical surface waves</subject><subject>Power generation</subject><subject>Substrates</subject><subject>Surface emitting lasers</subject><subject>Surface waves</subject><subject>Threshold currents</subject><subject>Vertical cavity surface emission lasers</subject><subject>Vertical cavity surface emitting lasers</subject><subject>Wavelengths</subject><issn>1041-1135</issn><issn>1941-0174</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc1LAzEQxYMoWKtnD14WD3radibJbpOj-A1FPdRzSLcT2bIfNUkL_e9NqVDwIHOYOfzegzePsUuEESLo8fRjNuIAcqS4LFEesQFqiTngRB6nG9KNKIpTdhbCEgBlIeSAvT3Qhpp-1VIXs95l8z7Gvs2prWOsu68MBUDetdmGfKwr2-SV3dRxm4W1d7aiA9jYQD6csxNnm0AXv3vIPp8eZ_cv-fT9-fX-bppXQuqYE-fkFC3mWDldAkduOSCWeqEnpBauUBbdnEvgE66VdsJBgeRSOoKyQiGG7Hbvu_L995pCNG0dKmoa21G_DkYDlpM0MpE3_5Jc8VIA8gRe_wGX_dp3KYVRSigoIH1syMZ7qPJ9CJ6cWfm6tX5rEMyuBpNqMLsazL6GpLjaK2oiOtBcYTIVP7cqgeA</recordid><startdate>20040401</startdate><enddate>20040401</enddate><creator>Louderback, D.A.</creator><creator>Fish, M.A.</creator><creator>Klem, J.F.</creator><creator>Serkland, D.K.</creator><creator>Choquette, K.D.</creator><creator>Pickrell, G.W.</creator><creator>Stone, R.V.</creator><creator>Guilfoyle, P.S.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20040401</creationdate><title>Development of bottom-emitting 1300-nm vertical-cavity surface-emitting lasers</title><author>Louderback, D.A. ; Fish, M.A. ; Klem, J.F. ; Serkland, D.K. ; Choquette, K.D. ; Pickrell, G.W. ; Stone, R.V. ; Guilfoyle, P.S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c349t-e22ef8edb1cf960212a201169d97e8df58a1fb240272989f3f051ef004e06c133</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Absorption</topic><topic>Adjustment</topic><topic>Apertures</topic><topic>Compatibility</topic><topic>Devices</topic><topic>Distributed Bragg reflectors</topic><topic>Emission</topic><topic>Gallium arsenide</topic><topic>Optical surface waves</topic><topic>Power generation</topic><topic>Substrates</topic><topic>Surface emitting lasers</topic><topic>Surface waves</topic><topic>Threshold currents</topic><topic>Vertical cavity surface emission lasers</topic><topic>Vertical cavity surface emitting lasers</topic><topic>Wavelengths</topic><toplevel>online_resources</toplevel><creatorcontrib>Louderback, D.A.</creatorcontrib><creatorcontrib>Fish, M.A.</creatorcontrib><creatorcontrib>Klem, J.F.</creatorcontrib><creatorcontrib>Serkland, D.K.</creatorcontrib><creatorcontrib>Choquette, K.D.</creatorcontrib><creatorcontrib>Pickrell, G.W.</creatorcontrib><creatorcontrib>Stone, R.V.</creatorcontrib><creatorcontrib>Guilfoyle, P.S.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE photonics technology letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Louderback, D.A.</au><au>Fish, M.A.</au><au>Klem, J.F.</au><au>Serkland, D.K.</au><au>Choquette, K.D.</au><au>Pickrell, G.W.</au><au>Stone, R.V.</au><au>Guilfoyle, P.S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Development of bottom-emitting 1300-nm vertical-cavity surface-emitting lasers</atitle><jtitle>IEEE photonics technology letters</jtitle><stitle>LPT</stitle><date>2004-04-01</date><risdate>2004</risdate><volume>16</volume><issue>4</issue><spage>963</spage><epage>965</epage><pages>963-965</pages><issn>1041-1135</issn><eissn>1941-0174</eissn><coden>IPTLEL</coden><abstract>We present experimental results on the development of bottom-emitting GaInNAs vertical-cavity surface-emitting lasers (VCSELs) operating at wavelengths near 1300 nm. This development effort is based on the modification of oxide-apertured top-emitting structures to allow emission through the GaAs substrate. Similar device performance was seen in both the top- and bottom-emitting structures. Single-mode output powers (adjusted for substrate absorption) of /spl sim/0.75 mW, with threshold currents of 1.3 mA, were achieved with /spl sim/3.5-μm aperture diameters. Larger multimode devices exhibited a maximum adjusted output power of 2.2 mW. To the best of our knowledge, these are the first bottom-emitting flip-chip compatible 1300-nm VCSELs fabricated with GaInNAs-GaAs active regions.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LPT.2004.824614</doi><tpages>3</tpages></addata></record> |
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| subjects | Absorption Adjustment Apertures Compatibility Devices Distributed Bragg reflectors Emission Gallium arsenide Optical surface waves Power generation Substrates Surface emitting lasers Surface waves Threshold currents Vertical cavity surface emission lasers Vertical cavity surface emitting lasers Wavelengths |
| title | Development of bottom-emitting 1300-nm vertical-cavity surface-emitting lasers |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-21T14%3A11%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Development%20of%20bottom-emitting%201300-nm%20vertical-cavity%20surface-emitting%20lasers&rft.jtitle=IEEE%20photonics%20technology%20letters&rft.au=Louderback,%20D.A.&rft.date=2004-04-01&rft.volume=16&rft.issue=4&rft.spage=963&rft.epage=965&rft.pages=963-965&rft.issn=1041-1135&rft.eissn=1941-0174&rft.coden=IPTLEL&rft_id=info:doi/10.1109/LPT.2004.824614&rft_dat=%3Cproquest_RIE%3E2426815291%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=883805045&rft_id=info:pmid/&rft_ieee_id=1281838&rfr_iscdi=true |