Optical and electrical properties of Nd-doped BiFeO3 thin films and heterostructures
High quality BiFeO3 (BFO) and Bi0.9Nd0.1FeO3 (BNFO) thin films (d = 150‐350 nm) were grown at 650‐750°C by RF sputtering on dielectric (SrTiO3; ZrO2) and conducting (Nb‐doped SrTiO3(100); n‐type Si) substrates. A direct band gap at 2.57 eV and 2.62 eV (at T =295 K) have been estimated for the BFO/YS...
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| Veröffentlicht in: | Physica status solidi. C 2009-12, Vol.6 (12), p.2746-2749 |
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| container_title | Physica status solidi. C |
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| creator | Vengalis, Bonifacas Devenson, Jelena Oginskis, Antanas K. Lisauskas, Vaclovas Anisimovas, Fiodoras Butkute, Renata Dapkus, Leonas |
| description | High quality BiFeO3 (BFO) and Bi0.9Nd0.1FeO3 (BNFO) thin films (d = 150‐350 nm) were grown at 650‐750°C by RF sputtering on dielectric (SrTiO3; ZrO2) and conducting (Nb‐doped SrTiO3(100); n‐type Si) substrates. A direct band gap at 2.57 eV and 2.62 eV (at T =295 K) have been estimated for the BFO/YSZ and BNFO/YSZ films from optical transmittance spectra while an unset of weak absorption has been indicated for the films at 2.20 eV. Transverse electrical transport of the (BFO, BNFO)/(STON, Si) heterostructures revealed nonlinear current versus voltage behavior and clearly defined rectifying properties. Schottky junction model has been applied for the heterojunctions at T =300 K although complicated shape of I‐U curves demonstrated increasing role of space charge limited current with T decreasing down to 78 K. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) |
| doi_str_mv | 10.1002/pssc.200982540 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_wiley</sourceid><recordid>TN_cdi_proquest_miscellaneous_901676426</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>896220451</sourcerecordid><originalsourceid>FETCH-LOGICAL-i3070-65d6c3713351065c3b8f9c84230da576b88dd275917db3a2e27f56b5b7ba9bea3</originalsourceid><addsrcrecordid>eNqFkEtPwzAQhCMEEqVw5Zwbp5S1HT9yhEJbpD6QWsTRcmJHNaRNsB1B_z1pi3rltDvSfKudiaJbBAMEgO8b74sBBsgEpimcRT3EECSIpfi82wXDCSMUXUZX3n8AEAqI9aLVogm2UFWstjo2lSmCO8jG1Y1xwRof12U814nutI4f7cgsSBzWdhuXttr4A7c2wbjaB9cWoXXGX0cXpaq8ufmb_eht9LwaTpLpYvwyfJgmlgCHhFHNCsIR6d4CRguSizIrRIoJaEU5y4XQGnOaIa5zorDBvKQspznPVZYbRfrR3fFu9-1Xa3yQG-sLU1Vqa-rWy6yLyLv87F-nyBjGkFLUObOj89tWZicbZzfK7SQCuS9Z7kuWp5Ll63I5PKmOTY6s9cH8nFjlPiXjhFP5Ph_LWcomT3wmJJBfNQqBiw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>896220451</pqid></control><display><type>article</type><title>Optical and electrical properties of Nd-doped BiFeO3 thin films and heterostructures</title><source>Wiley Online Library Journals Frontfile Complete</source><creator>Vengalis, Bonifacas ; Devenson, Jelena ; Oginskis, Antanas K. ; Lisauskas, Vaclovas ; Anisimovas, Fiodoras ; Butkute, Renata ; Dapkus, Leonas</creator><creatorcontrib>Vengalis, Bonifacas ; Devenson, Jelena ; Oginskis, Antanas K. ; Lisauskas, Vaclovas ; Anisimovas, Fiodoras ; Butkute, Renata ; Dapkus, Leonas</creatorcontrib><description>High quality BiFeO3 (BFO) and Bi0.9Nd0.1FeO3 (BNFO) thin films (d = 150‐350 nm) were grown at 650‐750°C by RF sputtering on dielectric (SrTiO3; ZrO2) and conducting (Nb‐doped SrTiO3(100); n‐type Si) substrates. A direct band gap at 2.57 eV and 2.62 eV (at T =295 K) have been estimated for the BFO/YSZ and BNFO/YSZ films from optical transmittance spectra while an unset of weak absorption has been indicated for the films at 2.20 eV. Transverse electrical transport of the (BFO, BNFO)/(STON, Si) heterostructures revealed nonlinear current versus voltage behavior and clearly defined rectifying properties. Schottky junction model has been applied for the heterojunctions at T =300 K although complicated shape of I‐U curves demonstrated increasing role of space charge limited current with T decreasing down to 78 K. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><identifier>ISSN: 1862-6351</identifier><identifier>ISSN: 1610-1642</identifier><identifier>EISSN: 1610-1642</identifier><identifier>DOI: 10.1002/pssc.200982540</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>61.05.cp ; 68.55.−a ; 73.40.Lq ; 77.84.Bw ; 78.66.Li ; 81.15.Cd ; Electric potential ; Electrical junctions ; Heterostructures ; Reproduction ; Silicon substrates ; Thin films ; Yttria stabilized zirconia ; Zirconium dioxide</subject><ispartof>Physica status solidi. C, 2009-12, Vol.6 (12), p.2746-2749</ispartof><rights>Copyright © 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssc.200982540$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssc.200982540$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1416,27923,27924,45573,45574</link.rule.ids></links><search><creatorcontrib>Vengalis, Bonifacas</creatorcontrib><creatorcontrib>Devenson, Jelena</creatorcontrib><creatorcontrib>Oginskis, Antanas K.</creatorcontrib><creatorcontrib>Lisauskas, Vaclovas</creatorcontrib><creatorcontrib>Anisimovas, Fiodoras</creatorcontrib><creatorcontrib>Butkute, Renata</creatorcontrib><creatorcontrib>Dapkus, Leonas</creatorcontrib><title>Optical and electrical properties of Nd-doped BiFeO3 thin films and heterostructures</title><title>Physica status solidi. C</title><addtitle>Phys. Status Solidi (c)</addtitle><description>High quality BiFeO3 (BFO) and Bi0.9Nd0.1FeO3 (BNFO) thin films (d = 150‐350 nm) were grown at 650‐750°C by RF sputtering on dielectric (SrTiO3; ZrO2) and conducting (Nb‐doped SrTiO3(100); n‐type Si) substrates. A direct band gap at 2.57 eV and 2.62 eV (at T =295 K) have been estimated for the BFO/YSZ and BNFO/YSZ films from optical transmittance spectra while an unset of weak absorption has been indicated for the films at 2.20 eV. Transverse electrical transport of the (BFO, BNFO)/(STON, Si) heterostructures revealed nonlinear current versus voltage behavior and clearly defined rectifying properties. Schottky junction model has been applied for the heterojunctions at T =300 K although complicated shape of I‐U curves demonstrated increasing role of space charge limited current with T decreasing down to 78 K. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</description><subject>61.05.cp</subject><subject>68.55.−a</subject><subject>73.40.Lq</subject><subject>77.84.Bw</subject><subject>78.66.Li</subject><subject>81.15.Cd</subject><subject>Electric potential</subject><subject>Electrical junctions</subject><subject>Heterostructures</subject><subject>Reproduction</subject><subject>Silicon substrates</subject><subject>Thin films</subject><subject>Yttria stabilized zirconia</subject><subject>Zirconium dioxide</subject><issn>1862-6351</issn><issn>1610-1642</issn><issn>1610-1642</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2009</creationdate><recordtype>article</recordtype><recordid>eNqFkEtPwzAQhCMEEqVw5Zwbp5S1HT9yhEJbpD6QWsTRcmJHNaRNsB1B_z1pi3rltDvSfKudiaJbBAMEgO8b74sBBsgEpimcRT3EECSIpfi82wXDCSMUXUZX3n8AEAqI9aLVogm2UFWstjo2lSmCO8jG1Y1xwRof12U814nutI4f7cgsSBzWdhuXttr4A7c2wbjaB9cWoXXGX0cXpaq8ufmb_eht9LwaTpLpYvwyfJgmlgCHhFHNCsIR6d4CRguSizIrRIoJaEU5y4XQGnOaIa5zorDBvKQspznPVZYbRfrR3fFu9-1Xa3yQG-sLU1Vqa-rWy6yLyLv87F-nyBjGkFLUObOj89tWZicbZzfK7SQCuS9Z7kuWp5Ll63I5PKmOTY6s9cH8nFjlPiXjhFP5Ph_LWcomT3wmJJBfNQqBiw</recordid><startdate>200912</startdate><enddate>200912</enddate><creator>Vengalis, Bonifacas</creator><creator>Devenson, Jelena</creator><creator>Oginskis, Antanas K.</creator><creator>Lisauskas, Vaclovas</creator><creator>Anisimovas, Fiodoras</creator><creator>Butkute, Renata</creator><creator>Dapkus, Leonas</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><scope>BSCLL</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>200912</creationdate><title>Optical and electrical properties of Nd-doped BiFeO3 thin films and heterostructures</title><author>Vengalis, Bonifacas ; Devenson, Jelena ; Oginskis, Antanas K. ; Lisauskas, Vaclovas ; Anisimovas, Fiodoras ; Butkute, Renata ; Dapkus, Leonas</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i3070-65d6c3713351065c3b8f9c84230da576b88dd275917db3a2e27f56b5b7ba9bea3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2009</creationdate><topic>61.05.cp</topic><topic>68.55.−a</topic><topic>73.40.Lq</topic><topic>77.84.Bw</topic><topic>78.66.Li</topic><topic>81.15.Cd</topic><topic>Electric potential</topic><topic>Electrical junctions</topic><topic>Heterostructures</topic><topic>Reproduction</topic><topic>Silicon substrates</topic><topic>Thin films</topic><topic>Yttria stabilized zirconia</topic><topic>Zirconium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Vengalis, Bonifacas</creatorcontrib><creatorcontrib>Devenson, Jelena</creatorcontrib><creatorcontrib>Oginskis, Antanas K.</creatorcontrib><creatorcontrib>Lisauskas, Vaclovas</creatorcontrib><creatorcontrib>Anisimovas, Fiodoras</creatorcontrib><creatorcontrib>Butkute, Renata</creatorcontrib><creatorcontrib>Dapkus, Leonas</creatorcontrib><collection>Istex</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. C</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Vengalis, Bonifacas</au><au>Devenson, Jelena</au><au>Oginskis, Antanas K.</au><au>Lisauskas, Vaclovas</au><au>Anisimovas, Fiodoras</au><au>Butkute, Renata</au><au>Dapkus, Leonas</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical and electrical properties of Nd-doped BiFeO3 thin films and heterostructures</atitle><jtitle>Physica status solidi. C</jtitle><addtitle>Phys. Status Solidi (c)</addtitle><date>2009-12</date><risdate>2009</risdate><volume>6</volume><issue>12</issue><spage>2746</spage><epage>2749</epage><pages>2746-2749</pages><issn>1862-6351</issn><issn>1610-1642</issn><eissn>1610-1642</eissn><abstract>High quality BiFeO3 (BFO) and Bi0.9Nd0.1FeO3 (BNFO) thin films (d = 150‐350 nm) were grown at 650‐750°C by RF sputtering on dielectric (SrTiO3; ZrO2) and conducting (Nb‐doped SrTiO3(100); n‐type Si) substrates. A direct band gap at 2.57 eV and 2.62 eV (at T =295 K) have been estimated for the BFO/YSZ and BNFO/YSZ films from optical transmittance spectra while an unset of weak absorption has been indicated for the films at 2.20 eV. Transverse electrical transport of the (BFO, BNFO)/(STON, Si) heterostructures revealed nonlinear current versus voltage behavior and clearly defined rectifying properties. Schottky junction model has been applied for the heterojunctions at T =300 K although complicated shape of I‐U curves demonstrated increasing role of space charge limited current with T decreasing down to 78 K. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssc.200982540</doi><tpages>4</tpages></addata></record> |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | 61.05.cp 68.55.−a 73.40.Lq 77.84.Bw 78.66.Li 81.15.Cd Electric potential Electrical junctions Heterostructures Reproduction Silicon substrates Thin films Yttria stabilized zirconia Zirconium dioxide |
| title | Optical and electrical properties of Nd-doped BiFeO3 thin films and heterostructures |
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