PMOSFET anti-fuse using GIDL-induced-HEIP mechanism

We propose a novel electrical fuse (e-fuse) program procedure using shallow trench isolation (STI) edge trapping mechanism of PMOSFET by applying AC pulses. We obtained flash characteristics using conventional PMOSFET structure, when injected AC pulse on source node under off-state condition ( V g =...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Microelectronics and reliability 2010-09, Vol.50 (9), p.1309-1311
Hauptverfasser:	Seo, J.Y., Seok, J.E., Kim, W.S., Cha, N.H., Kang, J.S., So, B.S.
Format:	Artikel
Sprache:	eng
Schlagworte:	Alternating current Applied sciences Electronics Exact sciences and technology Fuses Microelectronics Programming Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors Trapping Trenches
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!