PMOSFET anti-fuse using GIDL-induced-HEIP mechanism

PMOSFET anti-fuse using GIDL-induced-HEIP mechanism

We propose a novel electrical fuse (e-fuse) program procedure using shallow trench isolation (STI) edge trapping mechanism of PMOSFET by applying AC pulses. We obtained flash characteristics using conventional PMOSFET structure, when injected AC pulse on source node under off-state condition ( V g =...

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Veröffentlicht in:Microelectronics and reliability 2010-09, Vol.50 (9), p.1309-1311
Hauptverfasser: Seo, J.Y., Seok, J.E., Kim, W.S., Cha, N.H., Kang, J.S., So, B.S.
Format: Artikel
Sprache:eng
Schlagworte:
Alternating current
Applied sciences
Electronics
Exact sciences and technology
Fuses
Microelectronics
Programming
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Trapping
Trenches
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Beschreibung
Zusammenfassung:We propose a novel electrical fuse (e-fuse) program procedure using shallow trench isolation (STI) edge trapping mechanism of PMOSFET by applying AC pulses. We obtained flash characteristics using conventional PMOSFET structure, when injected AC pulse on source node under off-state condition ( V g = high, V d = low). In order to verify programming, double hump characteristics and thermal conduction analysis are introduced.
ISSN:0026-2714
1872-941X
DOI:10.1016/j.microrel.2010.07.053