Change in the microstructure at W/Si interface and surface by swift heavy ions

The mixing induced by 120 MeV Au +9 ions at W/Si interface are presented in this work. GIXRD result shows the formation of two type of tungsten silicides t-W 5Si 3 along with t-WSi 2 by atomic mixing at the interface on increasing the ion fluence. The diffusivity value calculated from the RBS measurements, suggest a transient molten phase at the interface causing the atomic mixing following by Thermal spike model. Range of the 120 MeV Au beam is about 16 μm which is largely exceeded the thickness of the metal film, approximately equal to the mean damage depth and mean ion range, thereby maximizing the atomic mixing at the interface regions. Electronic and nuclear energy loss ranges 40.41 keV/nm & 1.04 keV/nm for W and 12.94 keV/nm & 0.21 keV/nm for Si, calculated using SRIM 2003 program. The energy loss of 120 MeV Au ions within the Si/W/Si system is shown in figure. [Display omitted] ► The mixing induced by swift heavy ions at W/Si interface has been reported first time through this article. ► GIXRD result shows the formation of two type of tungsten silicides t-W5Si3 along with t-WSi 2 by atomic mixing at the interface. ► AFM results revealed increase in surface roughness and grain size which increases with ion fluence and at the highest fluence grains become stable and converted into a particular shape showing the irradiation effect at the surface also. Metal/Si thin film interfaces and surfaces can be modified by swift heavy ions (SHI) in a controlled manner. The mixing induced by 120 MeV Au +9 ions at W/Si interface are presented in the manuscript. Grazing Incident X-ray Diffraction (GIXRD) result shows the formation of two type of tungsten silicides t-W 5Si 3 along with t-WSi 2 by atomic mixing at the interface on increasing the ion fluence. The diffusivity value calculated from the Rutherford Backscattering Spectroscopy (RBS) measurements, suggest a transient molten phase at the interface causing the atomic mixing following by Thermal spike model. Atomic Force Microscopy (AFM) results revealed increase in surface roughness and grain size formation, which increases with ion fluence showing the irradiation effect at the surface also.