Contactless monitoring of Si substrate permittivity and resistivity from microwave to millimeter wave frequencies

A contactless and nondestructive technique is employed for characterizing single‐sided metallised silicon wafers. The reflection spectra are measured using a quasi‐optical millmeter‐wave setup in the frequency range 40–320 GHz. The results are compared with those provided by the coplanar waveguide m...

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Veröffentlicht in:	Microwave and optical technology letters 2010-11, Vol.52 (11), p.2500-2505
Hauptverfasser:	Elhawil, A., Neve, C.Roda, Olbrechts, B., Huynen, I., Raskin, J.-P., Poesen, G., Stiens, J., Vounckx, R.
Format:	Artikel
Sprache:	eng
Schlagworte:	Coplanar waveguides Dielectric constant Microwaves Monitoring nondestructive extraction method On-line systems Permittivity quasi-optical Reflection resistivity measurement semiconductors silicon Spectra
Online-Zugang:	Volltext
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