Contactless monitoring of Si substrate permittivity and resistivity from microwave to millimeter wave frequencies

Contactless monitoring of Si substrate permittivity and resistivity from microwave to millimeter wave frequencies

A contactless and nondestructive technique is employed for characterizing single‐sided metallised silicon wafers. The reflection spectra are measured using a quasi‐optical millmeter‐wave setup in the frequency range 40–320 GHz. The results are compared with those provided by the coplanar waveguide m...

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Veröffentlicht in:Microwave and optical technology letters 2010-11, Vol.52 (11), p.2500-2505
Hauptverfasser: Elhawil, A., Neve, C.Roda, Olbrechts, B., Huynen, I., Raskin, J.-P., Poesen, G., Stiens, J., Vounckx, R.
Format: Artikel
Sprache:eng
Schlagworte:
Coplanar waveguides
Dielectric constant
Microwaves
Monitoring
nondestructive extraction method
On-line systems
Permittivity
quasi-optical
Reflection
resistivity measurement
semiconductors
silicon
Spectra
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Beschreibung
Zusammenfassung:A contactless and nondestructive technique is employed for characterizing single‐sided metallised silicon wafers. The reflection spectra are measured using a quasi‐optical millmeter‐wave setup in the frequency range 40–320 GHz. The results are compared with those provided by the coplanar waveguide method, in terms of accuracy and range of applicability. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2500–2505, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25524
ISSN:0895-2477
1098-2760
1098-2760
DOI:10.1002/mop.25524