Contactless monitoring of Si substrate permittivity and resistivity from microwave to millimeter wave frequencies

A contactless and nondestructive technique is employed for characterizing single‐sided metallised silicon wafers. The reflection spectra are measured using a quasi‐optical millmeter‐wave setup in the frequency range 40–320 GHz. The results are compared with those provided by the coplanar waveguide m...

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Veröffentlicht in:Microwave and optical technology letters 2010-11, Vol.52 (11), p.2500-2505
Hauptverfasser: Elhawil, A., Neve, C.Roda, Olbrechts, B., Huynen, I., Raskin, J.-P., Poesen, G., Stiens, J., Vounckx, R.
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container_end_page 2505
container_issue 11
container_start_page 2500
container_title Microwave and optical technology letters
container_volume 52
creator Elhawil, A.
Neve, C.Roda
Olbrechts, B.
Huynen, I.
Raskin, J.-P.
Poesen, G.
Stiens, J.
Vounckx, R.
description A contactless and nondestructive technique is employed for characterizing single‐sided metallised silicon wafers. The reflection spectra are measured using a quasi‐optical millmeter‐wave setup in the frequency range 40–320 GHz. The results are compared with those provided by the coplanar waveguide method, in terms of accuracy and range of applicability. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:2500–2505, 2010; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25524
doi_str_mv 10.1002/mop.25524
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source Wiley Online Library Journals Frontfile Complete
subjects Coplanar waveguides
Dielectric constant
Microwaves
Monitoring
nondestructive extraction method
On-line systems
Permittivity
quasi-optical
Reflection
resistivity measurement
semiconductors
silicon
Spectra
title Contactless monitoring of Si substrate permittivity and resistivity from microwave to millimeter wave frequencies
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