Window layer development for microcrystalline silicon solar cells in n-i-p configuration

The development of p‐type and front ZnO layers, being window layers in n‐i‐p solar cells, is considered in this work. Electrical and optical properties of these layers were investigated on glass substrates, subject to thickness and doping variations. Subsequently, the effects of p‐layer thickness an...

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Veröffentlicht in:Physica status solidi. C 2010-04, Vol.7 (3-4), p.1069-1072
Hauptverfasser: Böttler, Wanjiao, Smirnov, Vladimir, Lambertz, Andreas, Hüpkes, Jürgen, Finger, Friedhelm
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Sprache:eng
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Zusammenfassung:The development of p‐type and front ZnO layers, being window layers in n‐i‐p solar cells, is considered in this work. Electrical and optical properties of these layers were investigated on glass substrates, subject to thickness and doping variations. Subsequently, the effects of p‐layer thickness and doping and front ZnO thickness on solar cell performance were studied. The optimal conditions for concerned layers are obtained, and discussed in terms of the built‐in voltage, potential barriers and total reflection. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
1610-1642
DOI:10.1002/pssc.200982833