Oxygen diffusion into GaN from oxygen implanted GaN or Al2O3

Thermal diffusion and incorporation of oxygen in gallium nitride during MOVPE growth process was investigated using secondary ion mass spectroscopy. The source of oxygen were (18O) implanted into GaN or Al2O3 substrate. Experiment shows no oxygen diffusion from Ar‐implanted sapphire or O‐implanted G...

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Veröffentlicht in:	Physica status solidi. C 2011-05, Vol.8 (5), p.1513-1515
Hauptverfasser:	Jakiela, Rafal, Dumiszewska, Ewa, Caban, Piotr, Stonert, Anna, Turos, Andrzej, Barcz, Adam
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Diffusion expitaxy Gallium nitrides GaN oxygen Reproduction Sapphire Secondary ion mass spectroscopy Solid state physics Thermal diffusion
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Beschreibung
Zusammenfassung:	Thermal diffusion and incorporation of oxygen in gallium nitride during MOVPE growth process was investigated using secondary ion mass spectroscopy. The source of oxygen were (18O) implanted into GaN or Al2O3 substrate. Experiment shows no oxygen diffusion from Ar‐implanted sapphire or O‐implanted GaN and extremely deep diffusion from O‐implanted sapphire. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1862-6351 1610-1642 1610-1642
DOI:	10.1002/pssc.201000808