Terahertz imaging using high electron mobility transistors as plasma wave detectors

Terahertz imaging using high electron mobility transistors as plasma wave detectors

Two experiments demonstrate that high electron mobility transistors (HEMTs) are well suited for terahertz (THz) imaging. We have shown that HEMTs can be effectively used as plasma wave detectors in a THz imaging system at frequencies higher than 1 THz at room temperature and this device are sensitiv...

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Veröffentlicht in:PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS 2009-12, Vol.6 (12), p.2855-2857
Hauptverfasser: Nadar, S., Coquillat, D., Sakowicz, M., Videlier, H., Teppe, F., Dyakonova, N., Knap, W., Peiris, J.-M., Lyonnet, J., Seliuta, D., Kasalynas, I., Valušis, G., Madjour, K., Théron, D., Gaquière, C., Poisson, M.-A.
Format: Artikel
Sprache:eng
Schlagworte:
85.30.Tv
85.35.−p
Detectors
Devices
General Physics
High electron mobility transistors
Imaging
Physics
Plasma waves
Reproduction
Semiconductor devices
Solid state physics
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Zusammenfassung:Two experiments demonstrate that high electron mobility transistors (HEMTs) are well suited for terahertz (THz) imaging. We have shown that HEMTs can be effectively used as plasma wave detectors in a THz imaging system at frequencies higher than 1 THz at room temperature and this device are sensitive to the polarization direction of THz radiation. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
1610-1642
DOI:10.1002/pssc.200982532