Chemical analysis of graphene oxide films after heat and chemical treatments by X-ray photoelectron and Micro-Raman spectroscopy

Several nanometer-thick graphene oxide films deposited on silicon nitride-on silicon substrates were exposed to nine different heat treatments (three in Argon, three in Argon and Hydrogen, and three in ultra-high vacuum), and also a film was held at 70 °C while being exposed to a vapor from hydrazin...

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Veröffentlicht in:Carbon (New York) 2009, Vol.47 (1), p.145-152
Hauptverfasser: Yang, Dongxing, Velamakanni, Aruna, Bozoklu, Gülay, Park, Sungjin, Stoller, Meryl, Piner, Richard D., Stankovich, Sasha, Jung, Inhwa, Field, Daniel A., Ventrice, Carl A., Ruoff, Rodney S.
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Sprache:eng
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Zusammenfassung:Several nanometer-thick graphene oxide films deposited on silicon nitride-on silicon substrates were exposed to nine different heat treatments (three in Argon, three in Argon and Hydrogen, and three in ultra-high vacuum), and also a film was held at 70 °C while being exposed to a vapor from hydrazine monohydrate. The films were characterized with atomic force microscopy to obtain local thickness and variation in thickness over extended regions. X-ray photoelectron spectroscopy was used to measure significant reduction of the oxygen content of the films; heating in ultra-high vacuum was particularly effective. The overtone region of the Raman spectrum was used, for the first time, to provide a “fingerprint” of changing oxygen content.
ISSN:0008-6223
1873-3891
DOI:10.1016/j.carbon.2008.09.045