Charge transient spectroscopy measurements of metal-oxide-semiconductor

Charge transient spectroscopy (QTS) is an electrical measurement technique related to deep‐level transient spectroscopy (DLTS). Using QTS it is possible to measure fast charge reloading processes even in the absence of depletion regions as a function of time and temperature with different pulse voltages and pulse widths. As a result, one can determine the number, the energetic position, the capture cross section, and the density of the electrically active traps. Here QTS measurements of Al/SiO2/Si Metal‐OxideSemiconductor structures are presented revealing the influence of manganese implantation into p‐ and n‐doped silicon on the charge carrier transport and trapping properties. The QTS results are compared to I‐V, C‐V and DLTS measurements on the same samples and the differences are discussed (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)