Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties

Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties

Dedicated to the memory of Prof. Ulrich Gösele It has been shown by means of EPR and NMR technique that at the Si‐SiO2 interface at appropriate oxidation temperature (time) local dynamical equilibrium may be achieved. At oxidation temperature 1130 °C the dencity of point defects is less than at lowe...

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Veröffentlicht in:Physica status solidi. C 2011-03, Vol.8 (3), p.694-696
Hauptverfasser: Kropman, Daniel, Kärner, Tiit, Dolgov, Sergei, Heinmaa, Ivo, Laas, Tõnu, Londos, Charalampos A.
Format: Artikel
Sprache:eng
Schlagworte:
Dynamical systems
Dynamics
EPR
hydrogen impurities
Impurities
NMR
Nuclear magnetic resonance
Oxidation
Point defects
Reproduction
Si-SiO2 interface
Silicon dioxide
Solid state physics
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Beschreibung
Zusammenfassung:Dedicated to the memory of Prof. Ulrich Gösele It has been shown by means of EPR and NMR technique that at the Si‐SiO2 interface at appropriate oxidation temperature (time) local dynamical equilibrium may be achieved. At oxidation temperature 1130 °C the dencity of point defects is less than at lower and higher temperature (1100 °C and 1200 °C) and the content of absorbed impurities (hydrogen, oxygen) diminishes (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
1610-1642
DOI:10.1002/pssc.201000269