Flip-chip assembly design of an electro-absorption modulated laser based on EM/circuit comodeling
We designed two kinds of flip‐chip bonded electro‐absorption modulated laser on AlN or Si carrier, working at 100 Gb s−1. A theoretical comodeling approach based on 3D electromagnetic and circuit simulations has been applied and validated by measurements. As demonstrated, integration and behavior of...
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Veröffentlicht in: | International journal of RF and microwave computer-aided engineering 2010-11, Vol.20 (6), p.672-681 |
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Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We designed two kinds of flip‐chip bonded electro‐absorption modulated laser on AlN or Si carrier, working at 100 Gb s−1. A theoretical comodeling approach based on 3D electromagnetic and circuit simulations has been applied and validated by measurements. As demonstrated, integration and behavior of future complex opto‐electronic modules could be optimized applying such EM‐based approach. © 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2010. |
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ISSN: | 1096-4290 1099-047X 1099-047X |
DOI: | 10.1002/mmce.20475 |