One-Step Synthesis of Bismuth Telluride Nanosheets of a Few Quintuple Layers in Thickness

Bi2Te3 nanosheets have been synthesized on Si substrates by surface‐assisted chemical vapor transport. The crumpled Bi2Te3 sheets grow in the basal plane of the hexagonal structure and are typically ≤3 nm in thickness (see picture; Te purple, Bi green). Raman studies found that modes involving atom...

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Veröffentlicht in:	Angewandte Chemie International Edition 2011-10, Vol.50 (44), p.10397-10401
Hauptverfasser:	Zhao, Yimin, Hughes, Robert W., Su, Zixue, Zhou, Wuzong, Gregory, Duncan H.
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Sprache:	eng
Schlagworte:	bismuth chalcogenides chemical vapor transport nanostructures tellurium
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description	Bi2Te3 nanosheets have been synthesized on Si substrates by surface‐assisted chemical vapor transport. The crumpled Bi2Te3 sheets grow in the basal plane of the hexagonal structure and are typically ≤3 nm in thickness (see picture; Te purple, Bi green). Raman studies found that modes involving atom displacement along the c axis that are inactive in the bulk material become Raman‐active in the Bi2Te3 nanosheets.
doi_str_mv	10.1002/anie.201104299
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title	One-Step Synthesis of Bismuth Telluride Nanosheets of a Few Quintuple Layers in Thickness
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