One-Step Synthesis of Bismuth Telluride Nanosheets of a Few Quintuple Layers in Thickness

Bi2Te3 nanosheets have been synthesized on Si substrates by surface‐assisted chemical vapor transport. The crumpled Bi2Te3 sheets grow in the basal plane of the hexagonal structure and are typically ≤3 nm in thickness (see picture; Te purple, Bi green). Raman studies found that modes involving atom displacement along the c axis that are inactive in the bulk material become Raman‐active in the Bi2Te3 nanosheets.