High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated facets has been utilized to obtain low threshold currents and threshold current densities for 1.3-μm multilayer InAs-GaAs quantum-dot lasers. A very low continuous-wave (CW) room-temperature threshold cur...

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Veröffentlicht in:IEEE photonics technology letters 2005-06, Vol.17 (6), p.1139-1141
Hauptverfasser: Liu, H.Y., Childs, D.T., Badcock, T.J., Groom, K.M., Sellers, I.R., Hopkinson, M., Hogg, R.A., Robbins, D.J., Mowbray, D.J., Skolnick, M.S.
Format: Artikel
Sprache:eng
Schlagworte:
Councils
Density
Devices
Epitaxial growth
Gallium arsenide
Holes
Land surface temperature
Lasers
Multilayers
Nonhomogeneous media
Power generation
Quantum dot lasers
Quantum dots
quantum dots (QDs)
Semiconductor diodes
Semiconductor lasers
Stationary state
Threshold current
Threshold currents
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Zusammenfassung:The combination of high-growth-temperature GaAs spacer layers and high-reflectivity (HR)-coated facets has been utilized to obtain low threshold currents and threshold current densities for 1.3-μm multilayer InAs-GaAs quantum-dot lasers. A very low continuous-wave (CW) room-temperature threshold current of 1.5 mA and a threshold current density of 18.8 A/cm 2 are achieved for a three-layer device with a 1-mm HR/HR cavity. For a 2-mm cavity, the CW threshold current density is as low as 17 A/cm 2 for an HR/HR device. An output power as high as 100 mW is obtained for a device with HR/cleaved facets.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2005.846948