A 4-91-GHz traveling-wave amplifier in a standard 0.12-μm SOI CMOS microprocessor technology
This paper presents five-stage and seven-stage traveling-wave amplifiers (TWA) in a 0.12- mu m SOI CMOS technology. The five-stage TWA has a 4-91-GHz bandpass frequency with a gain of 5 dB. The seven-stage TWA has a 5-86-GHz bandpass frequency with a gain of 9 dB. The seven-stage TWA has a measured...
Gespeichert in:
Veröffentlicht in: | IEEE journal of solid-state circuits 2004-09, Vol.39 (9), p.1455-1461 |
---|---|
Hauptverfasser: | , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | This paper presents five-stage and seven-stage traveling-wave amplifiers (TWA) in a 0.12- mu m SOI CMOS technology. The five-stage TWA has a 4-91-GHz bandpass frequency with a gain of 5 dB. The seven-stage TWA has a 5-86-GHz bandpass frequency with a gain of 9 dB. The seven-stage TWA has a measured 18-GHz noise figure, output 1-dB compression point, and output third-order intercept point of 5.5 dB, 10 dBm, and 15.5 dBm, respectively. The power consumption is 90 and 130 mW for the five-stage and seven-stage TWA, respectively, at a voltage power supply of 2.6 V. The chips occupy an area of less than 0.82 and 1 mm for the five-stage and seven-stage TWA, respectively. |
---|---|
ISSN: | 0018-9200 1558-173X |
DOI: | 10.1109/JSSC.2004.831612 |