An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers
An ultrawideband 3.1-10.6-GHz low-noise amplifier employing an input three-section band-pass Chebyshev filter is presented. Fabricated in a 0.18-/spl mu/m CMOS process, the IC prototype achieves a power gain of 9.3 dB with an input match of -10 dB over the band, a minimum noise figure of 4 dB, and a...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 2004-12, Vol.39 (12), p.2259-2268 |
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| container_end_page | 2268 |
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| container_issue | 12 |
| container_start_page | 2259 |
| container_title | IEEE journal of solid-state circuits |
| container_volume | 39 |
| creator | Bevilacqua, A. Niknejad, A.M. |
| description | An ultrawideband 3.1-10.6-GHz low-noise amplifier employing an input three-section band-pass Chebyshev filter is presented. Fabricated in a 0.18-/spl mu/m CMOS process, the IC prototype achieves a power gain of 9.3 dB with an input match of -10 dB over the band, a minimum noise figure of 4 dB, and an IIP3 of -6.7 dBm while consuming 9 mW. |
| doi_str_mv | 10.1109/JSSC.2004.836338 |
| format | Article |
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(IEEE) 2004</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c449t-3f51a4d5222805d8600c065f8ce63050f652d8a2bd6c49e48b729758e437ff133</citedby><cites>FETCH-LOGICAL-c449t-3f51a4d5222805d8600c065f8ce63050f652d8a2bd6c49e48b729758e437ff133</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1362834$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,792,23909,23910,25118,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1362834$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16326581$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Bevilacqua, A.</creatorcontrib><creatorcontrib>Niknejad, A.M.</creatorcontrib><title>An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers</title><title>IEEE journal of solid-state circuits</title><addtitle>JSSC</addtitle><description>An ultrawideband 3.1-10.6-GHz low-noise amplifier employing an input three-section band-pass Chebyshev filter is presented. Fabricated in a 0.18-/spl mu/m CMOS process, the IC prototype achieves a power gain of 9.3 dB with an input match of -10 dB over the band, a minimum noise figure of 4 dB, and an IIP3 of -6.7 dBm while consuming 9 mW.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Band pass filters</subject><subject>Chebyshev approximation</subject><subject>Chebyshev filter</subject><subject>Circuit properties</subject><subject>Circuits</subject><subject>CMOS</subject><subject>CMOS integrated circuits</subject><subject>CMOS process</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gain</subject><subject>Impedance matching</subject><subject>Integrated circuit noise</subject><subject>low power</subject><subject>low-noise amplifier (LNA)</subject><subject>Low-noise amplifiers</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>Noise</subject><subject>Noise levels</subject><subject>Power gain</subject><subject>Prototypes</subject><subject>Receivers</subject><subject>RFIC</subject><subject>Ultra wideband technology</subject><subject>Ultrawideband</subject><subject>ultrawideband (UWB)</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc1Lw0AQxRdRsFbvgpcgqKfU_c7mWIq2SksPVfC2bDezsCVN6m5r0b_ehBQKHjwNw_u9NwwPoWuCB4Tg_PF1sRgNKMZ8oJhkTJ2gHhFCpSRjH6eohzFRad7o5-gixlWzcq5ID82GVbIrt8HsfQFLUxXJaDZfJGW9T6vaR0jMelN65yEkrg4JG5C0uSjT8eQn2fsAJcSYBLDgvyDES3TmTBnh6jD76P356W00Safz8ctoOE0t5_k2ZU4QwwtBKVVYFEpibLEUTlmQDAvspKCFMnRZSMtz4GqZ0TwTCjjLnCOM9dFDl7sJ9ecO4lavfbRQlqaCehe1yiWlElPekPf_klRxnDOeNeDtH3BV70LVfKFzSpiQhJMGwh1kQx1jAKc3wa9N-NYE67YG3dag2xp0V0NjuTvkmmhN6YKprI9Hn2RUCtVG33ScB4CjzCRVjLNfdTCMig</recordid><startdate>20041201</startdate><enddate>20041201</enddate><creator>Bevilacqua, A.</creator><creator>Niknejad, A.M.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Fabricated in a 0.18-/spl mu/m CMOS process, the IC prototype achieves a power gain of 9.3 dB with an input match of -10 dB over the band, a minimum noise figure of 4 dB, and an IIP3 of -6.7 dBm while consuming 9 mW.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSSC.2004.836338</doi><tpages>10</tpages></addata></record> |
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| identifier | ISSN: 0018-9200 |
| ispartof | IEEE journal of solid-state circuits, 2004-12, Vol.39 (12), p.2259-2268 |
| issn | 0018-9200 1558-173X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_896226024 |
| source | IEEE Xplore |
| subjects | Amplifiers Applied sciences Band pass filters Chebyshev approximation Chebyshev filter Circuit properties Circuits CMOS CMOS integrated circuits CMOS process Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gain Impedance matching Integrated circuit noise low power low-noise amplifier (LNA) Low-noise amplifiers Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Noise Noise levels Power gain Prototypes Receivers RFIC Ultra wideband technology Ultrawideband ultrawideband (UWB) |
| title | An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers |
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