An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers

An ultrawideband 3.1-10.6-GHz low-noise amplifier employing an input three-section band-pass Chebyshev filter is presented. Fabricated in a 0.18-/spl mu/m CMOS process, the IC prototype achieves a power gain of 9.3 dB with an input match of -10 dB over the band, a minimum noise figure of 4 dB, and a...

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Veröffentlicht in:	IEEE journal of solid-state circuits 2004-12, Vol.39 (12), p.2259-2268
Hauptverfasser:	Bevilacqua, A., Niknejad, A.M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amplifiers Applied sciences Band pass filters Chebyshev approximation Chebyshev filter Circuit properties Circuits CMOS CMOS integrated circuits CMOS process Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Gain Impedance matching Integrated circuit noise low power low-noise amplifier (LNA) Low-noise amplifiers Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Noise Noise levels Power gain Prototypes Receivers RFIC Ultra wideband technology Ultrawideband ultrawideband (UWB)
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Beschreibung
Zusammenfassung:	An ultrawideband 3.1-10.6-GHz low-noise amplifier employing an input three-section band-pass Chebyshev filter is presented. Fabricated in a 0.18-/spl mu/m CMOS process, the IC prototype achieves a power gain of 9.3 dB with an input match of -10 dB over the band, a minimum noise figure of 4 dB, and an IIP3 of -6.7 dBm while consuming 9 mW.
ISSN:	0018-9200 1558-173X
DOI:	10.1109/JSSC.2004.836338