Generalizations of the Klaassen-Prins equation for calculating the noise of semiconductor devices
The Klaassen-Prins equation is the standard equation for calculating the drain thermal noise of long-channel MOSFETs. We show that the Klaassen-Prins equation is not always valid, even for MOSFETs. We present generalizations to the Klaassen-Prins equation that include velocity saturation effects of...
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| Veröffentlicht in: | IEEE transactions on electron devices 2005-11, Vol.52 (11), p.2463-2472 |
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| container_end_page | 2472 |
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| container_issue | 11 |
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| container_title | IEEE transactions on electron devices |
| container_volume | 52 |
| creator | Paasschens, J.C.J. Scholten, A.J. van Langevelde, R. |
| description | The Klaassen-Prins equation is the standard equation for calculating the drain thermal noise of long-channel MOSFETs. We show that the Klaassen-Prins equation is not always valid, even for MOSFETs. We present generalizations to the Klaassen-Prins equation that include velocity saturation effects of short-channel MOSFETs and that comprise also induced gate noise. |
| doi_str_mv | 10.1109/TED.2005.857189 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_proquest_miscellaneous_896224023</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1522684</ieee_id><sourcerecordid>28021094</sourcerecordid><originalsourceid>FETCH-LOGICAL-c447t-cebc9d9c3607a6ec13743c3b32ac93114f5cc650fb934b54b5229c8da60faf753</originalsourceid><addsrcrecordid>eNp9kc1rVTEQxUNR6LN17cLNRVBX9zVfNx9LqW0tFnRR1yFv3kRT7kva5N6C_eub21couBACYWZ-Z-DMIeQdo2vGqD25Pvu65pQOazNoZuwBWbFh0L1VUr0iK0qZ6a0w4pC8qfWmlUpKviL-AhMWP8YHP8WcapdDN_3B7vvofa2Y-p8lti7ezU_zLuTSgR9hHludfj-xKceKi7DiLkJO2xmmhm3xPgLWY_I6-LHi2-f_iPw6P7s-_dZf_bi4PP1y1YOUeuoBN2C3FoSi2isEJrQUIDaCe7CCMRkGADXQsLFCbob2OLdgtl7R4IMexBH5vN97W_LdjHVyu1gBx9EnzHN1xirOJeWikZ_-S3JDebuobOCHf8CbPJfUXDijtDTW6AU62UNQcq0Fg7stcefLX8eoW5JxLRm3JOP2yTTFx-e1vrZbhuITxPoi05wzKxdH7_dcRMSXcTOujBSPDmGXQQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>867489874</pqid></control><display><type>article</type><title>Generalizations of the Klaassen-Prins equation for calculating the noise of semiconductor devices</title><source>IEEE Electronic Library (IEL)</source><creator>Paasschens, J.C.J. ; Scholten, A.J. ; van Langevelde, R.</creator><creatorcontrib>Paasschens, J.C.J. ; Scholten, A.J. ; van Langevelde, R.</creatorcontrib><description>The Klaassen-Prins equation is the standard equation for calculating the drain thermal noise of long-channel MOSFETs. We show that the Klaassen-Prins equation is not always valid, even for MOSFETs. We present generalizations to the Klaassen-Prins equation that include velocity saturation effects of short-channel MOSFETs and that comprise also induced gate noise.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2005.857189</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Compact modeling ; Design. Technologies. Operation analysis. Testing ; Difference equations ; Drains ; Electronics ; Exact sciences and technology ; Gates ; high-frequency ; induced gate noise ; Integrated circuits ; Mathematical analysis ; MOSFET ; MOSFETs ; Noise ; RF CMOS ; Saturation ; Semiconductor device modeling ; Semiconductor device noise ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Shot noise ; Thermal noise ; Transistors</subject><ispartof>IEEE transactions on electron devices, 2005-11, Vol.52 (11), p.2463-2472</ispartof><rights>2005 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c447t-cebc9d9c3607a6ec13743c3b32ac93114f5cc650fb934b54b5229c8da60faf753</citedby><cites>FETCH-LOGICAL-c447t-cebc9d9c3607a6ec13743c3b32ac93114f5cc650fb934b54b5229c8da60faf753</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1522684$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1522684$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17221945$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Paasschens, J.C.J.</creatorcontrib><creatorcontrib>Scholten, A.J.</creatorcontrib><creatorcontrib>van Langevelde, R.</creatorcontrib><title>Generalizations of the Klaassen-Prins equation for calculating the noise of semiconductor devices</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>The Klaassen-Prins equation is the standard equation for calculating the drain thermal noise of long-channel MOSFETs. We show that the Klaassen-Prins equation is not always valid, even for MOSFETs. We present generalizations to the Klaassen-Prins equation that include velocity saturation effects of short-channel MOSFETs and that comprise also induced gate noise.</description><subject>Applied sciences</subject><subject>Compact modeling</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Difference equations</subject><subject>Drains</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Gates</subject><subject>high-frequency</subject><subject>induced gate noise</subject><subject>Integrated circuits</subject><subject>Mathematical analysis</subject><subject>MOSFET</subject><subject>MOSFETs</subject><subject>Noise</subject><subject>RF CMOS</subject><subject>Saturation</subject><subject>Semiconductor device modeling</subject><subject>Semiconductor device noise</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Shot noise</subject><subject>Thermal noise</subject><subject>Transistors</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kc1rVTEQxUNR6LN17cLNRVBX9zVfNx9LqW0tFnRR1yFv3kRT7kva5N6C_eub21couBACYWZ-Z-DMIeQdo2vGqD25Pvu65pQOazNoZuwBWbFh0L1VUr0iK0qZ6a0w4pC8qfWmlUpKviL-AhMWP8YHP8WcapdDN_3B7vvofa2Y-p8lti7ezU_zLuTSgR9hHludfj-xKceKi7DiLkJO2xmmhm3xPgLWY_I6-LHi2-f_iPw6P7s-_dZf_bi4PP1y1YOUeuoBN2C3FoSi2isEJrQUIDaCe7CCMRkGADXQsLFCbob2OLdgtl7R4IMexBH5vN97W_LdjHVyu1gBx9EnzHN1xirOJeWikZ_-S3JDebuobOCHf8CbPJfUXDijtDTW6AU62UNQcq0Fg7stcefLX8eoW5JxLRm3JOP2yTTFx-e1vrZbhuITxPoi05wzKxdH7_dcRMSXcTOujBSPDmGXQQ</recordid><startdate>20051101</startdate><enddate>20051101</enddate><creator>Paasschens, J.C.J.</creator><creator>Scholten, A.J.</creator><creator>van Langevelde, R.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20051101</creationdate><title>Generalizations of the Klaassen-Prins equation for calculating the noise of semiconductor devices</title><author>Paasschens, J.C.J. ; Scholten, A.J. ; van Langevelde, R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c447t-cebc9d9c3607a6ec13743c3b32ac93114f5cc650fb934b54b5229c8da60faf753</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Applied sciences</topic><topic>Compact modeling</topic><topic>Design. Technologies. Operation analysis. Testing</topic><topic>Difference equations</topic><topic>Drains</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Gates</topic><topic>high-frequency</topic><topic>induced gate noise</topic><topic>Integrated circuits</topic><topic>Mathematical analysis</topic><topic>MOSFET</topic><topic>MOSFETs</topic><topic>Noise</topic><topic>RF CMOS</topic><topic>Saturation</topic><topic>Semiconductor device modeling</topic><topic>Semiconductor device noise</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Shot noise</topic><topic>Thermal noise</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Paasschens, J.C.J.</creatorcontrib><creatorcontrib>Scholten, A.J.</creatorcontrib><creatorcontrib>van Langevelde, R.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Paasschens, J.C.J.</au><au>Scholten, A.J.</au><au>van Langevelde, R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Generalizations of the Klaassen-Prins equation for calculating the noise of semiconductor devices</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>2005-11-01</date><risdate>2005</risdate><volume>52</volume><issue>11</issue><spage>2463</spage><epage>2472</epage><pages>2463-2472</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>The Klaassen-Prins equation is the standard equation for calculating the drain thermal noise of long-channel MOSFETs. We show that the Klaassen-Prins equation is not always valid, even for MOSFETs. We present generalizations to the Klaassen-Prins equation that include velocity saturation effects of short-channel MOSFETs and that comprise also induced gate noise.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TED.2005.857189</doi><tpages>10</tpages></addata></record> |
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| ispartof | IEEE transactions on electron devices, 2005-11, Vol.52 (11), p.2463-2472 |
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| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Compact modeling Design. Technologies. Operation analysis. Testing Difference equations Drains Electronics Exact sciences and technology Gates high-frequency induced gate noise Integrated circuits Mathematical analysis MOSFET MOSFETs Noise RF CMOS Saturation Semiconductor device modeling Semiconductor device noise Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Shot noise Thermal noise Transistors |
| title | Generalizations of the Klaassen-Prins equation for calculating the noise of semiconductor devices |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T03%3A36%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Generalizations%20of%20the%20Klaassen-Prins%20equation%20for%20calculating%20the%20noise%20of%20semiconductor%20devices&rft.jtitle=IEEE%20transactions%20on%20electron%20devices&rft.au=Paasschens,%20J.C.J.&rft.date=2005-11-01&rft.volume=52&rft.issue=11&rft.spage=2463&rft.epage=2472&rft.pages=2463-2472&rft.issn=0018-9383&rft.eissn=1557-9646&rft.coden=IETDAI&rft_id=info:doi/10.1109/TED.2005.857189&rft_dat=%3Cproquest_RIE%3E28021094%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=867489874&rft_id=info:pmid/&rft_ieee_id=1522684&rfr_iscdi=true |