Generalizations of the Klaassen-Prins equation for calculating the noise of semiconductor devices

Generalizations of the Klaassen-Prins equation for calculating the noise of semiconductor devices

The Klaassen-Prins equation is the standard equation for calculating the drain thermal noise of long-channel MOSFETs. We show that the Klaassen-Prins equation is not always valid, even for MOSFETs. We present generalizations to the Klaassen-Prins equation that include velocity saturation effects of...

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Veröffentlicht in:IEEE transactions on electron devices 2005-11, Vol.52 (11), p.2463-2472
Hauptverfasser: Paasschens, J.C.J., Scholten, A.J., van Langevelde, R.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Compact modeling
Design. Technologies. Operation analysis. Testing
Difference equations
Drains
Electronics
Exact sciences and technology
Gates
high-frequency
induced gate noise
Integrated circuits
Mathematical analysis
MOSFET
MOSFETs
Noise
RF CMOS
Saturation
Semiconductor device modeling
Semiconductor device noise
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Shot noise
Thermal noise
Transistors
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Zusammenfassung:The Klaassen-Prins equation is the standard equation for calculating the drain thermal noise of long-channel MOSFETs. We show that the Klaassen-Prins equation is not always valid, even for MOSFETs. We present generalizations to the Klaassen-Prins equation that include velocity saturation effects of short-channel MOSFETs and that comprise also induced gate noise.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2005.857189