First-principles study of electronic structure of transition metal nitride: ReN under normal and high pressure

First-principles calculation was performed using tight-binding LMTO method with local density approximation (LDA) and atomic sphere approximation (ASA) to understand the electronic properties of rhenium nitride. The equilibrium geometries, the electronic band structure, the total and partial DOS are...

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Veröffentlicht in:Physica. B, Condensed matter Condensed matter, 2011-09, Vol.406 (17), p.3303-3307
Hauptverfasser: Asvini meenaatci, A.T., Rajeswarapalanichamy, R., Iyakutti, K.
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Sprache:eng
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Zusammenfassung:First-principles calculation was performed using tight-binding LMTO method with local density approximation (LDA) and atomic sphere approximation (ASA) to understand the electronic properties of rhenium nitride. The equilibrium geometries, the electronic band structure, the total and partial DOS are obtained under various pressures and are analyzed in comparison with the available experimental data. The most stable structure of ReN is NiAs like structure. Our results indicate that ReN can be used as a super-hard conductor. We estimated the average electron–phonon coupling constant to be 1.65 and superconducting transition temperature ( T c) is 5.1 K. The T c value increases with the increase in pressure.
ISSN:0921-4526
1873-2135
DOI:10.1016/j.physb.2011.05.046