Epitaxial growth of titanium oxycarbide on MgO (001) substrates by pulsed laser deposition

▶ High-quality epitaxial TiCxOy films are successfully grown on MgO (001) substrates. ▶ The stoichiometry of TiCxOy is about x∼0.47 and y∼0.69. ▶ The TiCxOy film is electrically conducting with resistivity of 137μΩcm. Epitaxial TiCxOy thin films were grown on MgO (001) substrates by using pulsed las...

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Veröffentlicht in:Applied surface science 2011, Vol.257 (7), p.2990-2994
Hauptverfasser: Do, Hien, Yen, Tzu-Chun, Tian, Chih-Sheng, Wu, Yue-Han, Chang, Li
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Sprache:eng
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Zusammenfassung:▶ High-quality epitaxial TiCxOy films are successfully grown on MgO (001) substrates. ▶ The stoichiometry of TiCxOy is about x∼0.47 and y∼0.69. ▶ The TiCxOy film is electrically conducting with resistivity of 137μΩcm. Epitaxial TiCxOy thin films were grown on MgO (001) substrates by using pulsed laser deposition method. High-resolution X-ray diffraction and transmission electron microscopy were used to examine crystallinity and microstructure of epitaxial TiCxOy film on MgO. The chemical composition of the film is determined to be x∼0.47 and y∼0.69 by X-ray photoelectron spectroscopy. Atomic force microscopy revealed that the surface of TiCxOy film is very smooth with roughness of 0.18nm. The resistivity of the TiCxOy film measured by four-point-probe method was about 137μΩcm.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2010.10.105