Thermal stability, oxygen non-stoichiometry and transport properties of LaNi sub(0.6Fe) sub(0).4O sub(3)
Thermal stability, oxygen non-stoichiometry and electrical conductivity of LaNi sub(0.6Fe) sub(0).4O sub(3) sub(-)[delta] were investigated in the temperature region of 20-1000 [deg]C in Ar/O sub(2 gas flows at oxygen partial pressures between 0.5 and 21,000 Pa. Diffusion mobility was measured in Ar...
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Veröffentlicht in: | Solid state ionics 2011-06, Vol.192 (1), p.424-430 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Thermal stability, oxygen non-stoichiometry and electrical conductivity of LaNi sub(0.6Fe) sub(0).4O sub(3) sub(-)[delta] were investigated in the temperature region of 20-1000 [deg]C in Ar/O sub(2 gas flows at oxygen partial pressures between 0.5 and 21,000 Pa. Diffusion mobility was measured in Ar/O) sub(2) gas flow at pO sub(2 = 18 Pa. Crystal structure of this compound was found to be stable at the mentioned experimental conditions. LaNi) sub(0).6Fe sub(0.4O) sub(3) sub(-[delta] is a p-type semiconductor with metallic type conductivity above 150 [deg]C at the investigated pO) sub(2) range. Two different (fast and slow) oxygen exchange areas on the temperature-pO sub(2 diagram were established, which are due to two different oxygen anion positions in the double B-site mixed perovskite structure. Oxygen non-stoichiometry in the fast oxygen exchange region reaches about 0.005 of oxygen atomic index. Chemical diffusion and oxygen surface exchange coefficients do not vary at 600-800 [deg]C, but show visible increase above 800-850 [deg]C.) |
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ISSN: | 0167-2738 |
DOI: | 10.1016/j.ssi.2010.04.019 |