A low power and low noise p-HEMT ku band VCO

In this letter, we report a differential 12-GHz voltage-controlled oscillator (VCO) implemented using a commercial GaAs pseudomorphic high electron mobility transistor (p-HEMT) process. The VCO can operate with 3mW of dc power. The single-side-band phase noise at 1-MHz offset from the carrier is -11...

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Veröffentlicht in:	IEEE microwave and wireless components letters 2006-03, Vol.16 (3), p.131-133
Hauptverfasser:	Manan, V., Long, S.I.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitance Capacitors Carriers Circuit noise Circuit properties Direct current Electric, optical and optoelectronic circuits Electronic circuits Electronics Exact sciences and technology Figure of merit (FOM) Gallium arsenide HEMTs high electron mobility transistor (HEMT) High electron mobility transistors Low noise Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits Microwaves MODFETs Noise Oscillators, resonators, synthetizers Phase noise Power consumption Semiconductor device noise Threshold voltage Varactors voltage-controlled oscillator (VCO) Voltage-controlled oscillators
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