A low power and low noise p-HEMT ku band VCO

A low power and low noise p-HEMT ku band VCO

In this letter, we report a differential 12-GHz voltage-controlled oscillator (VCO) implemented using a commercial GaAs pseudomorphic high electron mobility transistor (p-HEMT) process. The VCO can operate with 3mW of dc power. The single-side-band phase noise at 1-MHz offset from the carrier is -11...

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Veröffentlicht in:IEEE microwave and wireless components letters 2006-03, Vol.16 (3), p.131-133
Hauptverfasser: Manan, V., Long, S.I.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Capacitance
Capacitors
Carriers
Circuit noise
Circuit properties
Direct current
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Figure of merit (FOM)
Gallium arsenide
HEMTs
high electron mobility transistor (HEMT)
High electron mobility transistors
Low noise
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Microwaves
MODFETs
Noise
Oscillators, resonators, synthetizers
Phase noise
Power consumption
Semiconductor device noise
Threshold voltage
Varactors
voltage-controlled oscillator (VCO)
Voltage-controlled oscillators
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Beschreibung
Zusammenfassung:In this letter, we report a differential 12-GHz voltage-controlled oscillator (VCO) implemented using a commercial GaAs pseudomorphic high electron mobility transistor (p-HEMT) process. The VCO can operate with 3mW of dc power. The single-side-band phase noise at 1-MHz offset from the carrier is -116dBc and is achieved with 15mW of dc power consumption. This VCO has a figure of merit of -190.5dBc which is the best that has been reported for a p-HEMT VCO in the authors' knowledge
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2006.869856