A thermal model for insulated gate bipolar transistor module

A thermal model for insulated gate bipolar transistor module

A thermal resistor-capacitor (RC) model is introduced for the power insulated gate bipolar transistor (IGBT) modules used in a three-phase inverter. The parameters of the model are extracted from the experimental data for the transient thermal impedance from-junction-to-case Z/sub jc/ and case-to-am...

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Veröffentlicht in:IEEE transactions on power electronics 2004-07, Vol.19 (4), p.902-907
Hauptverfasser: Zhaohui Luo, Hyungkeun Ahn, Nokali, M.A.E.
Format: Artikel
Sprache:eng
Schlagworte:
Algorithms
Analytical models
Computer simulation
Data mining
Electronics
Finite element methods
Heat
Impedance
Insulated gate bipolar transistors
Inverters
Mathematical analysis
Mathematical models
Modules
Parameter estimation
Predictive models
Reinforced concrete
Switching frequency
Temperature
Thermal resistance
Transistors
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Beschreibung
Zusammenfassung:A thermal resistor-capacitor (RC) model is introduced for the power insulated gate bipolar transistor (IGBT) modules used in a three-phase inverter. The parameters of the model are extracted from the experimental data for the transient thermal impedance from-junction-to-case Z/sub jc/ and case-to-ambient Z/sub ca/. The accuracy of the RC model is verified by comparing its predictions with those resulting from the three-dimensional finite element method simulation. The parameter extraction algorithm is easy to adapt to other types of power modules in an industrial application environment.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2004.830089