Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening

Increasing the extraction efficiency of AlGaInP LEDs via n-side surface roughening

An n-side-up AlGaInP-based light-emitting diode (LED) with a triangle-like surface morphology was fabricated using the adhesive layer bonding technique, followed by wet etching to roughen the surface. The light output power of the roughened-surface LED was 1.6 times higher than that of a flat-surfac...

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Veröffentlicht in:IEEE photonics technology letters 2005-11, Vol.17 (11), p.2289-2291
Hauptverfasser: Lee, Y.J., Kuo, H.C., Wang, S.C., Hsu, T.C., Hsieh, M.H., Jou, M.J., Lee, B.J.
Format: Artikel
Sprache:eng
Schlagworte:
Adhesive bonding
Adhesive strength
AlGaInP
Bonding
Devices
Etching
Injection current
Light emitting diodes
Light scattering
light-emitting diode (LED)
Mirrors
Optical reflection
Power generation
Reflection
Rough surfaces
Roughening
Surface morphology
surface roughening
Surface roughness
Wet etching
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Beschreibung
Zusammenfassung:An n-side-up AlGaInP-based light-emitting diode (LED) with a triangle-like surface morphology was fabricated using the adhesive layer bonding technique, followed by wet etching to roughen the surface. The light output power of the roughened-surface LED was 1.6 times higher than that of a flat-surface LED at an injection current of 20 mA, i.e., a significant improvement attributed to the ability of the roughened surface to not only reduce the internal reflection between the rear mirror system and the semiconductor-air interface, but also to effectively scatter the light outside the LED device.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2005.858153