InAlAs-InGaAs double-gate HEMTs on transferred substrate

InAlAs-InGaAs double-gate HEMTs on transferred substrate

We report the fabrication and the dc characterization of the first In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As long double-gate (DG) high-electron mobility transistors (HEMTs). These devices have been obtained using a transferred substrate technique. Although the layer structure has not be...

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Veröffentlicht in:IEEE electron device letters 2004-06, Vol.25 (6), p.354-356
Hauptverfasser: Wichmann, N., Duszynski, I., Wallart, X., Bollaert, S., Cappy, A.
Format: Artikel
Sprache:eng
Schlagworte:
Charge
Devices
Direct current
Drains
Electric potential
Engineering Sciences
Fabrication
Frequency
HEMTs
High electron mobility transistors
Indium compounds
Indium gallium arsenide
Indium phosphide
MODFETs
Schottky barriers
Semiconductor devices
Silicon on insulator technology
Substrates
Voltage
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Beschreibung
Zusammenfassung:We report the fabrication and the dc characterization of the first In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As long double-gate (DG) high-electron mobility transistors (HEMTs). These devices have been obtained using a transferred substrate technique. Although the layer structure has not been optimized, a maximum extrinsic transconductance gm of 450 mS/mm is obtained. At the same bias voltage, the drain current I/sub d/ is 120 mA/mm, which gives a large ratio gm/I/sub d/ of 3.8 V/sup -/, indicating the improvement of the charge control efficiency due to the DG structure.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2004.829029