Uncooled performance of 10-Gb/s laser modules with InGaAlAs-InP and InGaAsP-InP MQW electroabsorption Modulators integrated with semiconductor amplifiers

Uncooled operation of long-reach high performance C-band 10 Gb/s of optical modulator modules is presented. Modules consisting of a distributed feedback laser and a chip with a monolithically integrated electroabsorption modulator and semiconductor optical amplifier based on multiquantum-well struct...

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Veröffentlicht in:	IEEE photonics technology letters 2005-07, Vol.17 (7), p.1378-1380
Hauptverfasser:	Frateschi, N.C., Zhang, J., Jambunathan, R., Choi, W.J., Ebert, C., Bond, A.E.
Format:	Artikel
Sprache:	eng
Schlagworte:	Dispersions Distributed feedback devices Electroabsorption Electroabsorption modulators Laser feedback Modulators Modules Noise levels Optical feedback Optical materials Optical modulation quantum confined Stark effect (QCSE) Quantum well devices Semiconductor lasers Semiconductor materials Semiconductor optical amplifiers Semiconductors Stimulated emission uncooled operation Voltage
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Beschreibung
Zusammenfassung:	Uncooled operation of long-reach high performance C-band 10 Gb/s of optical modulator modules is presented. Modules consisting of a distributed feedback laser and a chip with a monolithically integrated electroabsorption modulator and semiconductor optical amplifier based on multiquantum-well structures of both InGaAsP-InP and InGaAlAs-InP material systems are presented. Dispersion penalty of 1 dB over 94-km transmission, output power above 0 dBm, and low extinction ratio variation are demonstrated over an 80/spl deg/C temperature range. A simple analysis of the quantum confined Stark effect is employed to explain the temperature-dc bias voltage dependence.
ISSN:	1041-1135 1941-0174
DOI:	10.1109/LPT.2005.849975