Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35- mu m laser for metropolitan applications

Among the new semiconductor materials for telecom devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high T sub(0). Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate d...

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Veröffentlicht in:	IEEE photonics technology letters 2005-05, Vol.17 (5)
Hauptverfasser:	Dagens, B, Martinez, A, Make, D, Gouezigou, OLe, Provost, J-G, Sallet, V, Merghem, K, Harmand, J-C, Ramdane, A, Thedrez, B
Format:	Artikel
Sprache:	eng
Schlagworte:	Emission Fibers Gain Lasers Modulation Ridges Telecommunications
Online-Zugang:	Volltext
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