Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35- mu m laser for metropolitan applications

Among the new semiconductor materials for telecom devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high T sub(0). Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate d...

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Veröffentlicht in:IEEE photonics technology letters 2005-05, Vol.17 (5)
Hauptverfasser: Dagens, B, Martinez, A, Make, D, Gouezigou, OLe, Provost, J-G, Sallet, V, Merghem, K, Harmand, J-C, Ramdane, A, Thedrez, B
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Sprache:eng
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Zusammenfassung:Among the new semiconductor materials for telecom devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high T sub(0). Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate direct modulation. Here, we demonstrate the dynamic capabilities of GaInNAs-GaAs three-quantum-well ridge structure through 2.5-Gb/s directly modulated laser emission and transmission on standard fiber, in the temperature range 25 degree C-85 degree C. Besides transmission is demonstrated up to 10 Gb/s at 25 degree C on the same fiber, without penalty and bit-error-rate floor.
ISSN:1041-1135
DOI:10.1109/LPT.2005.845718