Floor free 10-Gb/s transmission with directly modulated GaInNAs-GaAs 1.35- mu m laser for metropolitan applications
Among the new semiconductor materials for telecom devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high T sub(0). Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate d...
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Veröffentlicht in: | IEEE photonics technology letters 2005-05, Vol.17 (5) |
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Hauptverfasser: | , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | Among the new semiconductor materials for telecom devices, the GaInNAs-GaAs structure presents interesting properties for low-cost applications, like high differential gain and high T sub(0). Another key aspect of the performance is the behavior of the GaInNAs-GaAs based lasers under high bit rate direct modulation. Here, we demonstrate the dynamic capabilities of GaInNAs-GaAs three-quantum-well ridge structure through 2.5-Gb/s directly modulated laser emission and transmission on standard fiber, in the temperature range 25 degree C-85 degree C. Besides transmission is demonstrated up to 10 Gb/s at 25 degree C on the same fiber, without penalty and bit-error-rate floor. |
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ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2005.845718 |