Fabrication and characterization of 100-nm In sub(0.53)Ga sub(0.47)As-In sub(0.52)Al sub(0.48)As double-gate HEMTs with two separate gate controls

In this letter, we demonstrate successful operation of 100-nm T-gates double-gate high electron mobility transistors with two separate gate controls (V sub(g1s) [ne] V sub(g2s)). These devices are fabricated by means of adhesive bonding technique using enzocyclocbutene polymer. The additional gate enables the variation of the threshold voltage V sub(th) in a wide range from -0.68 to -0.12V while keeping high cutoff frequency f sub(t) of about 170 GHz and high maximum oscillation frequency f sub(max) of about 200 GHz. These devices are considered as being very effective for millimeter-wave mixing applications and are promising devices for the fabrication of velocity modulation transistor (VMT) (Sakaki et al., 1982).