Single-chamber filament-assisted chemical vapor deposition of polymer and organosilicate films for air gap interconnect formation

Air gaps introduced at the trench level of advanced interconnects provide a means of lowering effective dielectric constant, k eff, without the use of mechanically weak ultra low-k films. Filament-assisted chemical vapor deposition (FACVD) is a promising technology for depositing polymers, dielectrics and metals. Initiated chemical vapor deposition (iCVD) is a novel one-step method of depositing polymers in the vapor phase while retaining properties found in solution chemistry. In this paper, we present a 300 mm FACVD tool employing iCVD and FACVD processes to deposit polymer adhesion promoter (AP), decomposable polymer (DP), and permeable SiCOH cap films for air gap integration. By decomposing the iCVD polymer to form voids, we show decreased capacitance for a 160 nm line-space single damascene structure.