Ion-implanted resist removal using atomic hydrogen

We removed B-, P-, and As-ion-implanted positive-tone novolak resists with an implantation dose of 5 × 10 12 to 5 × 10 15 atoms/cm 2 at 70 keV, using atomic hydrogen. Though the removal rate decreased with increase in the implantation dose, all of the ion-implanted resists were removed. The rates of thickness of the surface-hardened layer/all resist layer of B, P, and As implanted resists were 0.38, 0.26, and 0.16, respectively, by SEM observation. The removal rate decreased with increasing the rate of the surface-hardened layer. The energy supplied from the ions to the resist concentrated on the surface side in the increasing order of B-P-As.