Enhancement-Mode GaAs n-Channel MOSFET

This letter introduces the first enhancement-mode GaAs n-channel MOSFETs with a high channel mobility and an unpinned Fermi level at the oxide/GaAs interface. The NMOSFETs feature an In 0.3 Ga 0.7 As channel layer, a channel mobility of up to 6207 cm 2 /Vmiddots, and a dielectric stack thickness of...

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Veröffentlicht in:	IEEE electron device letters 2006-12, Vol.27 (12), p.959-962
Hauptverfasser:	Rajagopalan, K., Abrokwah, J., Droopad, R., Passlack, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Amorphous materials Applied sciences Channels CMOS technology Compound semiconductor Dielectric constant Drains Electronics enhancement mode Exact sciences and technology Fermi surfaces GaAs Gallium arsenide Gallium arsenides high-mobility channel Isolation technology MOSFET circuits MOSFETs Oxides Radio frequency Saturation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Threshold voltage Transconductance Transistors
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