Enhancement-Mode GaAs n-Channel MOSFET

Enhancement-Mode GaAs n-Channel MOSFET

This letter introduces the first enhancement-mode GaAs n-channel MOSFETs with a high channel mobility and an unpinned Fermi level at the oxide/GaAs interface. The NMOSFETs feature an In 0.3 Ga 0.7 As channel layer, a channel mobility of up to 6207 cm 2 /Vmiddots, and a dielectric stack thickness of...

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Veröffentlicht in:IEEE electron device letters 2006-12, Vol.27 (12), p.959-962
Hauptverfasser: Rajagopalan, K., Abrokwah, J., Droopad, R., Passlack, M.
Format: Artikel
Sprache:eng
Schlagworte:
Amorphous materials
Applied sciences
Channels
CMOS technology
Compound semiconductor
Dielectric constant
Drains
Electronics
enhancement mode
Exact sciences and technology
Fermi surfaces
GaAs
Gallium arsenide
Gallium arsenides
high-mobility channel
Isolation technology
MOSFET circuits
MOSFETs
Oxides
Radio frequency
Saturation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Threshold voltage
Transconductance
Transistors
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Zusammenfassung:This letter introduces the first enhancement-mode GaAs n-channel MOSFETs with a high channel mobility and an unpinned Fermi level at the oxide/GaAs interface. The NMOSFETs feature an In 0.3 Ga 0.7 As channel layer, a channel mobility of up to 6207 cm 2 /Vmiddots, and a dielectric stack thickness of 13.1-18.7 nm. Enhancement-mode NMOSFETs with a gate length of 1 mum, a source/drain spacing of 3 mum, and a threshold voltage of 0.05 V show a saturation current, transconductance, on-resistance, and subthreshold swing of 243 mA/mm, 81 mS/mm, 8.0 Omegamiddotmm, and 162 mV/dec, respectively
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2006.886319