Growth of [100]-Textured Gadolinium Nitride Films by CVD

Textured gadolinium nitride (GdN) thin films grown on (100) lanthanum aluminum oxide substrates were prepared by chemical vapor deposition with gadolinium chloride and ammonia. The films were found to have a (100) planar orientation and a growth rate of 102±5nm/min. X‐ray diffraction patterns show t...

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Veröffentlicht in:	Chemical vapor deposition 2010-09, Vol.16 (7-9), p.216-219
Hauptverfasser:	Brewer, Joseph R., Gernhart, Zane, Liu, Hsin-Yu, Cheung, Chin Li
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Chemical vapor deposition ferromagnetic Ferromagnetic materials Gadolinium gadolinium nitride Lanthanum lanthanum aluminum oxide Nitrides Reflection semiconductor Semiconductors textured growth
Online-Zugang:	Volltext
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